Продукція > SEMIKRON DANFOSS > SKM200GB125D 22890620
SKM200GB125D 22890620

SKM200GB125D 22890620 SEMIKRON DANFOSS


SKM200GB125D.pdf Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 160A
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Version: D56
кількість в упаковці: 1 шт
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис SKM200GB125D 22890620 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 160A, Application: for UPS; frequency changer; Inverter; photovoltaics, Type of module: IGBT, Topology: IGBT half-bridge, Case: SEMITRANS3, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 160A, Pulsed collector current: 300A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Version: D56, кількість в упаковці: 1 шт.

Інші пропозиції SKM200GB125D 22890620

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
SKM200GB125D 22890620 SKM200GB125D 22890620 Виробник : SEMIKRON DANFOSS SKM200GB125D.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 160A
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Version: D56
товар відсутній