Технічний опис SKP02N120XKSA1 Infineon
Description: IGBT 1200V 6.2A 62W TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A, Supplier Device Package: PG-TO220-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/260ns, Switching Energy: 220µJ, Test Condition: 800V, 2A, 91Ohm, 15V, Gate Charge: 11 nC, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 6.2 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9.6 A, Power - Max: 62 W.
Інші пропозиції SKP02N120XKSA1
| Фото | Назва | Виробник | Інформація |
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SKP02N120XKSA1 | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(3+Tab) TO-220AB Tube |
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SKP02N120XKSA1 | Виробник : Infineon Technologies |
Description: IGBT 1200V 6.2A 62W TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A Supplier Device Package: PG-TO220-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 23ns/260ns Switching Energy: 220µJ Test Condition: 800V, 2A, 91Ohm, 15V Gate Charge: 11 nC Part Status: Last Time Buy Current - Collector (Ic) (Max): 6.2 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 9.6 A Power - Max: 62 W |
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| SKP02N120XKSA1 | Виробник : Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
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