SMDJ350A DC COMPONENTS
Виробник: DC COMPONENTS
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 391÷432V; 5.29A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 5.29A
Breakdown voltage: 391...432V
Leakage current: 5µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 3kW
Max. off-state voltage: 350V
кількість в упаковці: 500 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 391÷432V; 5.29A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 5.29A
Breakdown voltage: 391...432V
Leakage current: 5µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 3kW
Max. off-state voltage: 350V
кількість в упаковці: 500 шт
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Технічний опис SMDJ350A DC COMPONENTS
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 3kW; 391÷432V; 5.29A; unidirectional; SMC; reel,tape, Kind of package: reel; tape, Case: SMC, Mounting: SMD, Semiconductor structure: unidirectional, Max. forward impulse current: 5.29A, Breakdown voltage: 391...432V, Leakage current: 5µA, Type of diode: TVS, Features of semiconductor devices: glass passivated, Peak pulse power dissipation: 3kW, Max. off-state voltage: 350V, кількість в упаковці: 500 шт.
Інші пропозиції SMDJ350A
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SMDJ350A | Виробник : Littelfuse Inc. | Description: TVS 3KW 350V 5% UNI DO-214AB |
товар відсутній |
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SMDJ350A | Виробник : Littelfuse Inc. | Description: TVS 3KW 350V 5% UNI DO-214AB |
товар відсутній |
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SMDJ350A | Виробник : DC COMPONENTS |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 391÷432V; 5.29A; unidirectional; SMC; reel,tape Kind of package: reel; tape Case: SMC Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 5.29A Breakdown voltage: 391...432V Leakage current: 5µA Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 3kW Max. off-state voltage: 350V |
товар відсутній |