SPD100N03S2L-04 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 30V 100A TO252-5
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO252-5-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 408+ | 49.22 грн |
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Технічний опис SPD100N03S2L-04 Infineon Technologies
Description: MOSFET N-CH 30V 100A TO252-5, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: PG-TO252-5-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V.
Інші пропозиції SPD100N03S2L-04
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SPD100N03S2L-04 | Виробник : INFINEON |
TO-252/D-PAK |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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SPD100N03S2L-04 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 100A TO252-5 Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-TO252-5-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V |
товар відсутній |