Технічний опис SSM6N7002CFU,LF(T Toshiba
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.17A, Power dissipation: 285mW, Case: SC88, Gate-source voltage: ±20V, On-state resistance: 4.7Ω, Mounting: SMD, Gate charge: 0.27nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 5 шт.
Інші пропозиції SSM6N7002CFU,LF(T
| Фото | Назва | Виробник | Інформація |
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SSM6N7002CFU,LF(T | Виробник : TOSHIBA |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.17A Power dissipation: 285mW Case: SC88 Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 0.27nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
товар відсутній |
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SSM6N7002CFU,LF(T | Виробник : TOSHIBA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.17A Power dissipation: 285mW Case: SC88 Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 0.27nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |