на замовлення 2000 шт:
термін постачання 203-212 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 331.02 грн |
10+ | 290.98 грн |
25+ | 246.35 грн |
100+ | 196.95 грн |
250+ | 192.94 грн |
500+ | 190.27 грн |
1000+ | 178.92 грн |
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Технічний опис STB75NF20 STMicroelectronics
Description: MOSFET N-CH 200V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V.
Інші пропозиції STB75NF20
Фото | Назва | Виробник | Інформація |
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STB75NF20 | Виробник : STMicroelectronics | Trans MOSFET N-CH 200V 75A 3-Pin(2+Tab) D2PAK T/R |
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STB75NF20 | Виробник : STMicroelectronics | Trans MOSFET N-CH 200V 75A 3-Pin(2+Tab) D2PAK T/R |
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STB75NF20 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 75A; 190W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 200V Drain current: 75A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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STB75NF20 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 200V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V |
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STB75NF20 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 200V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V |
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STB75NF20 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 75A; 190W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 200V Drain current: 75A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |