STD7N65M6 STMicroelectronics
на замовлення 395 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.72 грн |
| 10+ | 92.9 грн |
| 100+ | 63.96 грн |
| 500+ | 52.47 грн |
| 1000+ | 44.93 грн |
| 2500+ | 42.66 грн |
| 5000+ | 41.33 грн |
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Технічний опис STD7N65M6 STMicroelectronics
Description: MOSFET N-CH 650V 5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V.
Інші пропозиції STD7N65M6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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STD7N65M6 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 650V 5A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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STD7N65M6 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 650V 5A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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| STD7N65M6 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 650V 5A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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STD7N65M6 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V |
товар відсутній |
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STD7N65M6 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V |
товар відсутній |