STF23NM50N STMicroelectronics
на замовлення 480 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 391.57 грн |
| 10+ | 330.84 грн |
| 25+ | 181.8 грн |
| 100+ | 181.13 грн |
| 1000+ | 172.48 грн |
| 2000+ | 163.15 грн |
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Технічний опис STF23NM50N STMicroelectronics
Description: MOSFET N-CH 500V 17A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V.
Інші пропозиції STF23NM50N
| Фото | Назва | Виробник | Інформація |
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STF23NM50N | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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STF23NM50N | Виробник : STMicroelectronics |
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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| STF23NM50N | Виробник : STMicroelectronics |
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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STF23NM50N | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 11A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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STF23NM50N | Виробник : STMicroelectronics |
Description: MOSFET N-CH 500V 17A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V |
товар відсутній |
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STF23NM50N | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 11A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |