Технічний опис STGB20NB32LZ
Description: IGBT 375V 40A 150W I2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 2.3µs/11.5µs, Switching Energy: 11.8mJ (off), Test Condition: 250V, 20A, 1kOhm, 4.5V, Gate Charge: 51 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 375 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 150 W.
Інші пропозиції STGB20NB32LZ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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STGB20NB32LZ | Виробник : STMicroelectronics |
Description: IGBT 375V 40A 150W I2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 2.3µs/11.5µs Switching Energy: 11.8mJ (off) Test Condition: 250V, 20A, 1kOhm, 4.5V Gate Charge: 51 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 375 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W |
товар відсутній |