STH12N120K5-2 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 1200V 12A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
Description: MOSFET N-CH 1200V 12A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1000+ | 456.74 грн |
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Технічний опис STH12N120K5-2 STMicroelectronics
Description: STMICROELECTRONICS - STH12N120K5-2 - Leistungs-MOSFET, n-Kanal, 1.2 kV, 12 A, 0.62 ohm, H2PAK-2, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 12A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 250W, Bauform - Transistor: H2PAK-2, Anzahl der Pins: 3Pin(s), Produktpalette: MDmesh K5, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.62ohm, SVHC: No SVHC (07-Jul-2017).
Інші пропозиції STH12N120K5-2 за ціною від 473.31 грн до 909.84 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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STH12N120K5-2 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 1200V 12A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V |
на замовлення 1072 шт: термін постачання 21-31 дні (днів) |
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STH12N120K5-2 | Виробник : STMicroelectronics | MOSFET N-channel 1200 V, 0.62 Ohm typ 12 A MDmesh K5 Power MOSFET in H2PAK-2 package |
на замовлення 470 шт: термін постачання 21-30 дні (днів) |
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STH12N120K5-2 | Виробник : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STH12N120K5-2 - Leistungs-MOSFET, n-Kanal, 1.2 kV, 12 A, 0.62 ohm, H2PAK-2, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: H2PAK-2 Anzahl der Pins: 3Pin(s) Produktpalette: MDmesh K5 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.62ohm SVHC: No SVHC (07-Jul-2017) |
на замовлення 2389 шт: термін постачання 21-31 дні (днів) |
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STH12N120K5-2 | Виробник : STMicroelectronics | Trans MOSFET N-CH 1.2KV 12A 3-Pin(2+Tab) H2PAK T/R |
товар відсутній |
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STH12N120K5-2 | Виробник : STMicroelectronics | Trans MOSFET N-CH 1.2KV 12A 3-Pin(2+Tab) H2PAK T/R |
товар відсутній |
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STH12N120K5-2 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1200V; 7.6A; Idm: 48A; 250W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 250W Case: H2PAK-2 Gate-source voltage: ±30V On-state resistance: 0.69Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1000 шт |
товар відсутній |
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STH12N120K5-2 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1200V; 7.6A; Idm: 48A; 250W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 250W Case: H2PAK-2 Gate-source voltage: ±30V On-state resistance: 0.69Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |