STH310N10F7-6 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 923 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 389.25 грн |
10+ | 314.89 грн |
100+ | 254.74 грн |
500+ | 212.5 грн |
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Технічний опис STH310N10F7-6 STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V, Power Dissipation (Max): 315W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: H2PAK-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V.
Інші пропозиції STH310N10F7-6 за ціною від 184.26 грн до 417.48 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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STH310N10F7-6 | Виробник : STMicroelectronics | MOSFET N-Ch 100 V 2.1 mOhm 180 A STripFET |
на замовлення 727 шт: термін постачання 21-30 дні (днів) |
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STH310N10F7-6 | Виробник : STMicroelectronics | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R |
товар відсутній |
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STH310N10F7-6 | Виробник : STMicroelectronics | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R |
товар відсутній |
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STH310N10F7-6 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-6 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: H2PAK-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V |
товар відсутній |