STP15N65M5 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N CH 650V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N CH 650V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 988 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 179.64 грн |
50+ | 139.2 грн |
100+ | 114.53 грн |
500+ | 90.95 грн |
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Технічний опис STP15N65M5 STMicroelectronics
Description: MOSFET N CH 650V 11A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100.
Інші пропозиції STP15N65M5
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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STP15N65M5 | Виробник : STMicroelectronics | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
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STP15N65M5 | Виробник : STMicroelectronics | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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STP15N65M5 | Виробник : STMicroelectronics | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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STP15N65M5 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Pulsed drain current: 44A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.34Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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STP15N65M5 | Виробник : STMicroelectronics | MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS |
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STP15N65M5 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Pulsed drain current: 44A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.34Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced |
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