STP33N65M2 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
на замовлення 712 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 260.17 грн |
10+ | 210.3 грн |
100+ | 170.15 грн |
500+ | 141.94 грн |
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Технічний опис STP33N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V.
Інші пропозиції STP33N65M2 за ціною від 126.55 грн до 284.47 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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STP33N65M2 | Виробник : STMicroelectronics | MOSFET N-channel 650 V, 0.117 Ohm typ 24 A MDmesh M2 Power MOSFET in TO-220 package |
на замовлення 1070 шт: термін постачання 21-30 дні (днів) |
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STP33N65M2 | Виробник : STMicroelectronics | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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STP33N65M2 | Виробник : STMicroelectronics | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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STP33N65M2 | Виробник : STMicroelectronics | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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STP33N65M2 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 96A; 190W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 96A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: THT Gate charge: 41.5nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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STP33N65M2 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 96A; 190W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 96A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: THT Gate charge: 41.5nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |