Технічний опис STQ2NK60ZR-AP STMicroelectronics
Description: MOSFET N-CH 600V 400MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-92-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Інші пропозиції STQ2NK60ZR-AP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| STQ2NK60ZR-AP |
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на замовлення 16030 шт: термін постачання 14-28 дні (днів) |
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| STQ2NK60ZR-AP***** |
на замовлення 18000 шт: термін постачання 14-28 дні (днів) |
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STQ2NK60ZR-AP | Виробник : STMicroelectronics |
Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 T/R |
товар відсутній |
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| STQ2NK60ZR-AP | Виробник : STMicroelectronics |
Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 T/R |
товар відсутній |
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STQ2NK60ZR-AP | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 400MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-92-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
товар відсутній |
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STQ2NK60ZR-AP | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 400MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-92-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
товар відсутній |