STU5N70M6-S STMicroelectronics


stu5n70m6-s.pdf Виробник: STMicroelectronics
Description: MOSFET N-CH 700V 3.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.75A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 100 V
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Технічний опис STU5N70M6-S STMicroelectronics

Description: MOSFET N-CH 700V 3.5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.75A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: I-PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 100 V.

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STU5N70M6-S Виробник : STMicroelectronics stu5n70m6_s-1852189.pdf MOSFET N-channel 700 V, 1.2 Ohm typ 3.5 A MDmesh M6 Power MOSFET
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