STW32NM50N STMicroelectronics
на замовлення 1177 шт:
термін постачання 133-142 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 450.26 грн |
25+ | 355.21 грн |
100+ | 276.33 грн |
250+ | 243.78 грн |
600+ | 243.12 грн |
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Технічний опис STW32NM50N STMicroelectronics
Description: MOSFET N CH 500V 22A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V.
Інші пропозиції STW32NM50N
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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STW32NM50N | Виробник : STMicroelectronics | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 Tube |
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STW32NM50N | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.86A Pulsed drain current: 88A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.1Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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STW32NM50N | Виробник : STMicroelectronics |
Description: MOSFET N CH 500V 22A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V |
товар відсутній |
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STW32NM50N | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.86A Pulsed drain current: 88A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.1Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |