STY60NM60

STY60NM60 STMicroelectronics


en.CD00002663.pdf Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 60A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
на замовлення 979 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1501.05 грн
30+ 1198.39 грн
120+ 1123.49 грн
510+ 899.71 грн
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Технічний опис STY60NM60 STMicroelectronics

Description: MOSFET N-CH 600V 60A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V, Power Dissipation (Max): 560W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: MAX247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V.

Інші пропозиції STY60NM60

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STY60NM60 STY60NM60 Виробник : STMicroelectronics cd0000266.pdf Trans MOSFET N-CH 600V 60A 3-Pin(3+Tab) Max247 Tube
товар відсутній
STY60NM60 Виробник : STMicroelectronics cd0000266.pdf Trans MOSFET N-CH 600V 60A 3-Pin(3+Tab) Max247 Tube
товар відсутній
STY60NM60 Виробник : STMicroelectronics sty60nm60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.8A; Idm: 60A; 460W; MAX247
Kind of package: tube
Pulsed drain current: 60A
Power dissipation: 460W
Polarisation: unipolar
Technology: MDmesh™
Features of semiconductor devices: ESD protected gate
Drain current: 37.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Case: MAX247
On-state resistance: 55mΩ
Gate-source voltage: ±30V
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
STY60NM60 STY60NM60 Виробник : STMicroelectronics sty60nm60-1852293.pdf MOSFET N-Ch 600 Volt 60 Amp
товар відсутній
STY60NM60 Виробник : STMicroelectronics sty60nm60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.8A; Idm: 60A; 460W; MAX247
Kind of package: tube
Pulsed drain current: 60A
Power dissipation: 460W
Polarisation: unipolar
Technology: MDmesh™
Features of semiconductor devices: ESD protected gate
Drain current: 37.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Case: MAX247
On-state resistance: 55mΩ
Gate-source voltage: ±30V
Mounting: THT
товар відсутній