на замовлення 12300 шт:
термін постачання 813-822 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.7 грн |
| 10+ | 168.25 грн |
| 25+ | 138.72 грн |
| 100+ | 118.7 грн |
| 250+ | 111.8 грн |
| 500+ | 105.59 грн |
| 1000+ | 89.72 грн |
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Технічний опис TK160F10N1L,LQ Toshiba
Description: MOSFET N-CH 100V 160A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-220SM(W), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V.
Інші пропозиції TK160F10N1L,LQ
| Фото | Назва | Виробник | Інформація |
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TK160F10N1L,LQ | Виробник : Toshiba |
 Trans MOSFET N-CH Si 100V 160A 3-Pin(2+Tab) TO-220SM(W) T/R Automotive AEC-Q101 |
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TK160F10N1L,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 160A TO220SM Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V |
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TK160F10N1L,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 160A TO220SM Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V |
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