Технічний опис TK49N65W5,S1F Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.5mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V.
Інші пропозиції TK49N65W5,S1F
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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TK49N65W5,S1F | Виробник : Toshiba | MOSFETs Silicon N-Channel MOS |
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TK49N65W5,S1F | Виробник : Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.5mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V |
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TK49N65W5,S1F | Виробник : Toshiba | MOSFET TO247(OS) PD=400W 1MHz PWR MOSFET TRNS |
товар відсутній |