TK6A60D(STA4,Q,M) - Transistors - Field N-cannal

TK6A60D(STA4,Q,M)

TK6A60D(STA4,Q,M)

Product id: 107094
Manufacturer:
Transistors - Field N-cannal

docget.jsp?did=12003&prodName=TK6A60D
On stock/available

Technical description TK6A60D(STA4,Q,M)

Price TK6A60D(STA4,Q,M) From 42.59 UAH to 86.45 UAH

TK6A60D(STA4,Q,M)
TK6A60D(STA4,Q,M)
Manufacturer: Toshiba
MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm
TK6A60D_datasheet_en_20131101-1144157.pdf
available 4 pc(s)
lead time 8-21 days
1+ 86.45 UAH
10+ 76.4 UAH
100+ 51.53 UAH
500+ 42.59 UAH
TK6A60D(STA4,Q,M)
Manufacturer:
TK6A60D(STA4,Q,M) Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS
docget.jsp?did=12003&prodName=TK6A60D
out of stock, you can ask lead time by adding item to cart
TK6A60D(STA4,Q,M)
TK6A60D(STA4,Q,M)
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6A TO220SIS
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Power Dissipation (Max): 40W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack
docget.jsp?did=12003&prodName=TK6A60D
out of stock, you can ask lead time by adding item to cart
TK6A60D(STA4,Q,M)
Manufacturer: Toshiba
Trans MOSFET N-CH Si 600V 6A 3-Pin(3+Tab) TO-220SIS
docget.jsp?did=12003&prodName=TK6A60D
out of stock, you can ask lead time by adding item to cart
TK6A60D
Manufacturer:

available 58000 pc(s)
lead time 14-28 days
TK6A60D(STA4,Q,M)
TK6A60D(STA4,Q,M)
Manufacturer: Toshiba
Trans MOSFET N-CH Si 600V 6A 3-Pin(3+Tab) TO-220SIS
tk6a60d_datasheet_en_20131101.pdf
out of stock, you can ask lead time by adding item to cart