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TKR74F04PB,LXGQ Toshiba Semiconductor and Storage

Name: TKR74F04PB,LXGQ
Brand: Toshiba Semiconductor and Storage
SKU: 12282299-3
Price: 150.41 UAH
Availability: InStock

TKR74F04PB_datasheet_en_20200624.pdf?did=30448&prodName=TKR74F04PB

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V

на замовлення 1000 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
1000+	150.41 грн

Мінімальне замовлення: 1000

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Технічний опис TKR74F04PB,LXGQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 250A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Ta), Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-220SM(W), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V.

Інші пропозиції TKR74F04PB,LXGQ за ціною від 139.53 грн до 315.45 грн

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TKR74F04PB,LXGQ

Виробник : Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V

на замовлення 2284 шт:

термін постачання 21-31 дні (днів)