TP0606N3-G-P002 Microchip Technology
на замовлення 1985 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.79 грн |
| 25+ | 71.91 грн |
| 100+ | 56.34 грн |
| 1000+ | 52.74 грн |
| 4000+ | 52.68 грн |
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Технічний опис TP0606N3-G-P002 Microchip Technology
Description: MOSFET P-CH 60V 320MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 320mA (Tj), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Інші пропозиції TP0606N3-G-P002
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| TP0606N3-G-P002 | Виробник : MICROCHIP TECHNOLOGY |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -320mA; Idm: -3.5A; 1W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -320mA Pulsed drain current: -3.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: THT Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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TP0606N3-G-P002 | Виробник : Microchip Technology |
Description: MOSFET P-CH 60V 320MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
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| TP0606N3-G-P002 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -320mA; Idm: -3.5A; 1W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -320mA Pulsed drain current: -3.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: THT Kind of package: tape Kind of channel: enhanced |
товар відсутній |