Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > TPCA8052-H(T2L1,VM

TPCA8052-H(T2L1,VM Toshiba Semiconductor and Storage

Name: TPCA8052-H(T2L1,VM
Brand: Toshiba Semiconductor and Storage
SKU: 10447213-3
Price: 27.95 UAH
Availability: InStock

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V

на замовлення 5000 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
5000+	27.95 грн

Мінімальне замовлення: 5000

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Технічний опис TPCA8052-H(T2L1,VM Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 20A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V, Power Dissipation (Max): 1.6W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V.

Інші пропозиції TPCA8052-H(T2L1,VM за ціною від 26.3 грн до 77.11 грн

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Ціна без ПДВ

TPCA8052-H(T2L1,VM

Виробник : Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V

на замовлення 14442 шт:

термін постачання 21-31 дні (днів)