TPH2R306NH,L1Q - Transistors - Field N-cannal

TPH2R306NH,L1Q

Product id: 149945
Manufacturer:
Transistors - Field N-cannal

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On stock/available

Technical description TPH2R306NH,L1Q

Price TPH2R306NH,L1Q From 1.49 $ to 15.09 $

TPH2R306NH,L1Q
TPH2R306NH,L1Q
Manufacturer: Toshiba
MOSFET U-MOSVIII-H 60V 130A 72nC MOSFET
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available 5157 pc(s)
lead time 8-21 days
1+ 3.08 $
10+ 2.44 $
100+ 1.91 $
500+ 1.49 $
TPH2R306NH,L1Q
TPH2R306NH,L1Q
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 60A SOP ADV
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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available 4661 pc(s)
lead time 7-22 days
1+ 4.18 $
10+ 3.76 $
25+ 3.21 $
100+ 2.5 $
250+ 2.44 $
500+ 2.12 $
1000+ 1.77 $
2500+ 1.74 $
TPH2R306NH,L1Q
TPH2R306NH,L1Q
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 60A SOP ADV
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Surcharge for the reel of $7)
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
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available 4661 pc(s)
lead time 7-22 days
1+ 15.09 $
10+ 4.85 $
25+ 3.6 $
100+ 2.6 $
250+ 2.48 $
500+ 2.14 $
1000+ 1.78 $
2500+ 1.74 $
TPH2R306NH,L1Q
Manufacturer: Toshiba
MOSFET N CH 60V 60A SOP ADV
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out of stock, you can ask lead time by adding item to cart
TPH2R306NH,L1Q
TPH2R306NH,L1Q
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 60A SOP ADV
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)
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out of stock, you can ask lead time by adding item to cart