TPH3R003PL,LQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 30V 88A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.08 грн |
| 10+ | 51.2 грн |
| 100+ | 35.43 грн |
| 500+ | 27.78 грн |
| 1000+ | 23.64 грн |
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Технічний опис TPH3R003PL,LQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 88A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V.
Інші пропозиції TPH3R003PL,LQ
| Фото | Назва | Виробник | Інформація |
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TPH3R003PL,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 88A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V |
товар відсутній |
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TPH3R003PL,LQ | Виробник : Toshiba |
MOSFET N-Ch 30V 2940pF 50nC 134A 90W |
товар відсутній |