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TPHR9003NL,L1Q Toshiba Semiconductor and Storage

Name: TPHR9003NL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: 4563084-3
Price: 57.39 UAH
Availability: InStock

TPHR9003NL_datasheet_en_20191018.pdf?did=13936&prodName=TPHR9003NL

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V

на замовлення 10000 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
5000+	61.64 грн
10000+	57.39 грн

Мінімальне замовлення: 5000

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Технічний опис TPHR9003NL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 60A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V, Power Dissipation (Max): 1.6W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V.

Інші пропозиції TPHR9003NL,L1Q за ціною від 57.88 грн до 153.44 грн

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TPHR9003NL,L1Q

Виробник : Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V

на замовлення 12302 шт:

термін постачання 21-31 дні (днів)