TSM340N06CH X0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 60V 30A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V
на замовлення 10387 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.42 грн |
| 75+ | 38.05 грн |
| 150+ | 27.61 грн |
| 525+ | 21.66 грн |
| 1050+ | 18.43 грн |
| 2025+ | 16.41 грн |
| 5025+ | 15.3 грн |
| 10050+ | 14.16 грн |
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Технічний опис TSM340N06CH X0G Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 30A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V.
Інші пропозиції TSM340N06CH X0G
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