TSM4936DCS RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 21.16 грн |
5000+ | 19.31 грн |
12500+ | 17.88 грн |
Відгуки про товар
Написати відгук
Технічний опис TSM4936DCS RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 5.9A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V, Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active.
Інші пропозиції TSM4936DCS RLG за ціною від 15.95 грн до 56.05 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TSM4936DCS RLG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 30V 5.9A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 26795 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
TSM4936DCS RLG | Виробник : TAI-SEM |
Transistor 2xN-Channel MOSFET; 30V; 20V; 53mOhm; 5,9A; 3W; -55°C ~ 150°C; TSM4936DCS RLG TSM4936DCS TTSM4936dcs кількість в упаковці: 25 шт |
на замовлення 50 шт: термін постачання 28-31 дні (днів) |
|
|||||||||||||
TSM4936DCS RLG | Виробник : Taiwan Semiconductor | Trans MOSFET N-CH 30V 5.9A 8-Pin SOP T/R |
товар відсутній |
||||||||||||||
TSM4936DCS RLG | Виробник : TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.9A Power dissipation: 2.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
TSM4936DCS RLG | Виробник : Taiwan Semiconductor | MOSFET 30V, 5.9A, Dual N-Channel Power MOSFET |
товар відсутній |
||||||||||||||
TSM4936DCS RLG | Виробник : TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.9A Power dissipation: 2.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhanced |
товар відсутній |