UCC27211DR Texas Instruments
Виробник: Texas InstrumentsDriver 4.5A 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC T/R
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 56.11 грн |
| 5000+ | 54.32 грн |
| 10000+ | 54.26 грн |
| 12500+ | 50.54 грн |
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Технічний опис UCC27211DR Texas Instruments
Category: MOSFET/IGBT drivers, Description: IC: driver; H-bridge,MOSFET half-bridge; SO8; 4A; 50÷290mV; Ch: 2, Type of integrated circuit: driver, Topology: H-bridge; MOSFET half-bridge, Kind of integrated circuit: high-/low-side; MOSFET gate driver, Case: SO8, Output current: 4A, Output voltage: 50...290mV, Number of channels: 2, Supply voltage: 8...17V DC, Integrated circuit features: active Miller clamp; integrated bootstrap functionality; UVLO (UnderVoltage LockOut), Mounting: SMD, Operating temperature: -40...140°C, Impulse rise time: 600ns, Pulse fall time: 400ns, Kind of package: reel; tape, кількість в упаковці: 1 шт.
Інші пропозиції UCC27211DR за ціною від 56.08 грн до 143.31 грн
| Фото | Назва | Виробник | Інформація |
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UCC27211DR | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 7.2ns, 5.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.3V, 2.7V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2713 шт: термін постачання 21-31 дні (днів) |
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UCC27211DR | Виробник : Texas Instruments |
Driver 4.5A 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC T/R |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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UCC27211DR | Виробник : Texas Instruments |
Gate Drivers 120V Boot,4A Peak,Hi Freq Hi/Lo-Side Drv |
на замовлення 461 шт: термін постачання 21-30 дні (днів) |
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UCC27211DR | Виробник : Texas Instruments |
Driver 4.5A 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC T/R |
товар відсутній |
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UCC27211DR | Виробник : Texas Instruments |
Driver 4.5A 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC T/R |
товар відсутній |
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UCC27211DR | Виробник : Texas Instruments |
Driver 4.5A 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC T/R |
товар відсутній |
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| UCC27211DR | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge,MOSFET half-bridge; SO8; 4A; 50÷290mV; Ch: 2 Type of integrated circuit: driver Topology: H-bridge; MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: 4A Output voltage: 50...290mV Number of channels: 2 Supply voltage: 8...17V DC Integrated circuit features: active Miller clamp; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 600ns Pulse fall time: 400ns Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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UCC27211DR | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 7.2ns, 5.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.3V, 2.7V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
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| UCC27211DR | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge,MOSFET half-bridge; SO8; 4A; 50÷290mV; Ch: 2 Type of integrated circuit: driver Topology: H-bridge; MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: 4A Output voltage: 50...290mV Number of channels: 2 Supply voltage: 8...17V DC Integrated circuit features: active Miller clamp; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 600ns Pulse fall time: 400ns Kind of package: reel; tape |
товар відсутній |