UT6JA3TCR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET 2P-CH 20V 5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 2759 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.16 грн |
| 10+ | 44.86 грн |
| 100+ | 31.07 грн |
| 500+ | 24.37 грн |
| 1000+ | 20.74 грн |
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Технічний опис UT6JA3TCR Rohm Semiconductor
Description: MOSFET 2P-CH 20V 5A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V, Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active.
Інші пропозиції UT6JA3TCR за ціною від 25.44 грн до 56.24 грн
| Фото | Назва | Виробник | Інформація |
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UT6JA3TCR | Виробник : ROHM Semiconductor |
MOSFET -20V P-CHANNEL |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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| UT6JA3TCR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 0.118Ω Gate-source voltage: ±8V Pulsed drain current: -12A Power dissipation: 2W Gate charge: 6.5nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 кількість в упаковці: 1 шт |
товар відсутній |
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UT6JA3TCR | Виробник : Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 5A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
товар відсутній |
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| UT6JA3TCR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 0.118Ω Gate-source voltage: ±8V Pulsed drain current: -12A Power dissipation: 2W Gate charge: 6.5nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 |
товар відсутній |