VN0606L-G-P003 Microchip Technology
на замовлення 1583 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.25 грн |
| 25+ | 95.49 грн |
| 100+ | 75.06 грн |
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Технічний опис VN0606L-G-P003 Microchip Technology
Description: MOSFET N-CH 60V 330MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330mA (Tj), Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Інші пропозиції VN0606L-G-P003
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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VN0606L-G-P003 | Виробник : Microchip Technology |
 Trans MOSFET N-CH Si 60V 0.33A 3-Pin TO-92 T/R |
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| VN0606L-G-P003 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 330mA; Idm: 1.6A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.33A Pulsed drain current: 1.6A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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VN0606L-G-P003 | Виробник : Microchip Technology |
Description: MOSFET N-CH 60V 330MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
товар відсутній |
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| VN0606L-G-P003 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 330mA; Idm: 1.6A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.33A Pulsed drain current: 1.6A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |