VP3203N8-g Microchip Technology
Виробник: Microchip Technology
Description: MOSFET P-CH 30V 1.1A TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET P-CH 30V 1.1A TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
на замовлення 1920 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 132.93 грн |
25+ | 106.06 грн |
100+ | 96.48 грн |
Відгуки про товар
Написати відгук
Технічний опис VP3203N8-g Microchip Technology
Description: MOSFET P-CH 30V 1.1A TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Інші пропозиції VP3203N8-g за ціною від 93 грн до 144.14 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
VP3203N8-g | Виробник : Microchip Technology | MOSFET 30V 0.6Ohm |
на замовлення 2705 шт: термін постачання 21-30 дні (днів) |
|
|||||||||
VP3203N8-g | Виробник : MICROCHIP TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.1A Pulsed drain current: -4A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||
VP3203N8-g | Виробник : Microchip Technology |
Description: MOSFET P-CH 30V 1.1A TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.5A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 10mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
товар відсутній |
||||||||||
VP3203N8-g | Виробник : MICROCHIP TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.1A Pulsed drain current: -4A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |