Технічний опис VS-10ETS10S-M3 Vishay
Description: DIODE GEN PURP 1KV 10A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 1000 V.
Інші пропозиції VS-10ETS10S-M3
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VS-10ETS10S-M3 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1KV 10A TO263ABPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1000 V |
товар відсутній |
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VS-10ETS10S-M3 | Виробник : Vishay Semiconductors |
Rectifiers New Input Diodes - D2PAK-e3 |
товар відсутній |