VS-1N3671RA Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 800 µA @ 800 V
Description: DIODE GEN PURP 800V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 800 µA @ 800 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис VS-1N3671RA Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 12A DO203AA, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 12A, Supplier Device Package: DO-203AA (DO-4), Operating Temperature - Junction: -65°C ~ 200°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A, Current - Reverse Leakage @ Vr: 800 µA @ 800 V.
Інші пропозиції VS-1N3671RA
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
VS-1N3671RA | Виробник : Vishay Semiconductors | Rectifiers 800 Volt 12 Amp |
товар відсутній |