VS-4ESH01HM3/86A Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 1315 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.54 грн |
| 10+ | 40.16 грн |
| 100+ | 30.76 грн |
| 500+ | 22.83 грн |
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Технічний опис VS-4ESH01HM3/86A Vishay General Semiconductor - Diodes Division
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 100V, Load current: 4A, Reverse recovery time: 31ns, Semiconductor structure: single diode, Features of semiconductor devices: ultrafast switching, Capacitance: 24pF, Case: SMPC, Max. forward voltage: 0.79V, Max. forward impulse current: 130A, Leakage current: 10µA, Kind of package: reel; tape, кількість в упаковці: 1 шт.
Інші пропозиції VS-4ESH01HM3/86A за ціною від 16.78 грн до 49.65 грн
| Фото | Назва | Виробник | Інформація |
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VS-4ESH01HM3/86A | Виробник : Vishay Semiconductors |
Rectifiers Hypfst Rct 4A 100V AEC-Q101 |
на замовлення 1524 шт: термін постачання 21-30 дні (днів) |
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| VS-4ESH01HM3/86A | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Reverse recovery time: 31ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 24pF Case: SMPC Max. forward voltage: 0.79V Max. forward impulse current: 130A Leakage current: 10µA Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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VS-4ESH01HM3/86A | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 4A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товар відсутній |
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| VS-4ESH01HM3/86A | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Reverse recovery time: 31ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 24pF Case: SMPC Max. forward voltage: 0.79V Max. forward impulse current: 130A Leakage current: 10µA Kind of package: reel; tape |
товар відсутній |