Технічний опис VS-60EPU04HN3 Vishay Semiconductors
Description: DIODE GEN PURP 400V 60A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 85 ns, Technology: Standard, Current - Average Rectified (Io): 60A, Supplier Device Package: TO-247AC, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 60 A, Current - Reverse Leakage @ Vr: 50 µA @ 400 V, Qualification: AEC-Q101.
Інші пропозиції VS-60EPU04HN3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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VS-60EPU04HN3 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 60A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 60 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V Qualification: AEC-Q101 |
товар відсутній |