Технічний опис VS-8EWS16STRR-M3 Vishay
Description: DIODE GEN PURP 1.6KV 8A D-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: D-PAK (TO-252AA), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 1600 V.
Інші пропозиції VS-8EWS16STRR-M3
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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VS-8EWS16STRR-M3 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1.6KV 8A D-PAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V |
товар відсутній |
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| VS-8EWS16STRR-M3 | Виробник : Vishay Semiconductors |
Schottky Diodes & Rectifiers New Input Diodes - D-PAK-e3 |
товар відсутній |