VS-ETH3006-1HM3 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 30A TO262AA, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 26 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-262AA, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V, Qualification: AEC-Q101.