VS-HFA08TB120S-M3 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 5916 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 95.81 грн |
50+ | 73.84 грн |
100+ | 58.51 грн |
500+ | 46.55 грн |
1000+ | 37.92 грн |
2000+ | 35.69 грн |
5000+ | 33.44 грн |
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Технічний опис VS-HFA08TB120S-M3 Vishay General Semiconductor - Diodes Division
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 1.2kV; 8A; 160ns; D2PAK; Ufmax: 3.1V; Ir: 1mA, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 1.2kV, Load current: 8A, Max. load current: 32A, Reverse recovery time: 160ns, Semiconductor structure: single diode, Features of semiconductor devices: ultrafast switching, Capacitance: 20pF, Case: D2PAK, Max. forward voltage: 3.1V, Max. forward impulse current: 130A, Leakage current: 1mA, Power dissipation: 29W, Kind of package: tube, кількість в упаковці: 1 шт.
Інші пропозиції VS-HFA08TB120S-M3 за ціною від 65.73 грн до 103.33 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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VS-HFA08TB120S-M3 | Виробник : Vishay Semiconductors | Rectifiers 1200V 8A TO-263 HexFred |
на замовлення 1131 шт: термін постачання 21-30 дні (днів) |
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VS-HFA08TB120S-M3 | Виробник : Vishay | Rectifier Diode Switching 8A 95ns 3-Pin(2+Tab) D2PAK Tube |
товар відсутній |
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VS-HFA08TB120S-M3 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; 160ns; D2PAK; Ufmax: 3.1V; Ir: 1mA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Max. load current: 32A Reverse recovery time: 160ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 20pF Case: D2PAK Max. forward voltage: 3.1V Max. forward impulse current: 130A Leakage current: 1mA Power dissipation: 29W Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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VS-HFA08TB120S-M3 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; 160ns; D2PAK; Ufmax: 3.1V; Ir: 1mA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Max. load current: 32A Reverse recovery time: 160ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 20pF Case: D2PAK Max. forward voltage: 3.1V Max. forward impulse current: 130A Leakage current: 1mA Power dissipation: 29W Kind of package: tube |
товар відсутній |