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WML12N105C2 WAYON


Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1.05kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WML12N105C2 WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1.05kV; 4A; Idm: 18A; 35W, Type of transistor: N-MOSFET, Technology: WMOS™ C2, Polarisation: unipolar, Drain-source voltage: 1.05kV, Drain current: 4A, Pulsed drain current: 18A, Power dissipation: 35W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 0.8Ω, Mounting: THT, Gate charge: 33nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.

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WML12N105C2 Виробник : WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1.05kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній