WMO2N100D1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WMO2N100D1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 2A, Pulsed drain current: 8A, Power dissipation: 60W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 6.3Ω, Mounting: SMD, Gate charge: 18nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції WMO2N100D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| WMO2N100D1 | Виробник : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Pulsed drain current: 8A Power dissipation: 60W Case: TO252 Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
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