WND10P08YQ WeEn Semiconductors
Виробник: WeEn Semiconductors
Description: DIODE GP 800V 10A IITO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: IITO-220-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GP 800V 10A IITO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: IITO-220-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 5978 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 61.8 грн |
50+ | 47.88 грн |
100+ | 37.95 грн |
500+ | 30.18 грн |
1000+ | 24.59 грн |
2000+ | 23.15 грн |
5000+ | 21.68 грн |
Відгуки про товар
Написати відгук
Технічний опис WND10P08YQ WeEn Semiconductors
Description: DIODE GP 800V 10A IITO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: IITO-220-2, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
Інші пропозиції WND10P08YQ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
WND10P08YQ | Виробник : WeEn Semiconductors | Diodes - General Purpose, Power, Switching WND10P08Y/IITO220-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товар відсутній |