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XP221P0501TR-G

XP221P0501TR-G TOREX


Виробник: TOREX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.5A; Idm: -1A; 0.4W; SOT23-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Power dissipation: 0.4W
Case: SOT23-3
Gate-source voltage: ±8V
On-state resistance: 2.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
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Технічний опис XP221P0501TR-G TOREX

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -0.5A; Idm: -1A; 0.4W; SOT23-3, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -500mA, Pulsed drain current: -1A, Power dissipation: 0.4W, Case: SOT23-3, Gate-source voltage: ±8V, On-state resistance: 2.7Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 5 шт.

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XP221P0501TR-G XP221P0501TR-G Виробник : TOREX Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.5A; Idm: -1A; 0.4W; SOT23-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Power dissipation: 0.4W
Case: SOT23-3
Gate-source voltage: ±8V
On-state resistance: 2.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній