Технічний опис ZTX651QSTZ Diodes Inc
Description: PWR MID PERF TRANSISTOR EP3 AMMO, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V, Frequency - Transition: 175MHz, Supplier Device Package: E-Line (TO-92 compatible), Grade: Automotive, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.5 W, Qualification: AEC-Q101.
Інші пропозиції ZTX651QSTZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| ZTX651QSTZ | Виробник : Diodes Incorporated |
 Description: PWR MID PERF TRANSISTOR EP3 AMMOPackaging: Tape & Box (TB) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 175MHz Supplier Device Package: E-Line (TO-92 compatible) Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W Qualification: AEC-Q101 |
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| ZTX651QSTZ | Виробник : Diodes Incorporated |
Bipolar Transistors - BJT Pwr Mid Perf Transistor EP3 AMMO 2K |
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