Виробник: Fisher
Ізоляційні матеріали
Група: Прокладка теплопровідна
Опис: Прокладка теплопровідна керамічна, 3мм 25х21мм, для ТО-218, ТО-247, 25Вт/мК, 10кВ/мм
Розмір: 21х25х3мм + отв.4,0мм, під корпус TO-218, TO-247
Матеріал: Кераміка

Виробник: Fisher
Ізоляційні матеріали
Група: Прокладка теплопровідна
Опис: Прокладка теплопровідна керамічна для ТО-247, 25Вт/мК, 10кВ/мм
Розмір: 20х23х1мм, під корпус TO-247
Матеріал: Кераміка

Виробник: AG TermoPasty
Ізоляційні матеріали
Група: Прокладка теплопровідна
Опис: Прокладка теплопровідна керамічна для ТО-247, 1,5Вт/мК
Розмір: 23х18х0,3мм, під корпус TO-247

Виробник: SMC Diode Solutions
Description: DIODE ARR SCHOT 150V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V

Виробник: Boyd Laconia, LLC
Description: BOARD LEVEL HEAT SINK
Packaging: Bulk
Material: Aluminum
Length: 1.650" (41.91mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.000" (25.40mm)
Package Cooled: TO-218, TO-220, TO-247, Multiwatt
Attachment Method: Bolt On and PC Pin
Power Dissipation @ Temperature Rise: 4.0W @ 20°C
Thermal Resistance @ Forced Air Flow: 1.50°C/W @ 400 LFM
Thermal Resistance @ Natural: 2.70°C/W
Fin Height: 2.500" (63.50mm)
Material Finish: Black Anodized

Виробник: Infineon Technologies
MOSFET SIC_DISCRETE

Виробник: Infineon Technologies
MOSFET SIC_DISCRETE

Виробник: Infineon Technologies
MOSFET AUTOMOTIVE_SICMOS

Виробник: FISCHER ELEKTRONIK
Category: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO247; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK
Application: TO247
Length: 20mm
Width: 23mm
Thickness: 1mm
Type of heat transfer pad: ceramic
Electrical insulation: 10kV/mm
Pad volume resistance: 100TΩ/cm
Thermal conductivity: 25W/mK

Виробник: Microchip Technology
Description: DIODE GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V

Виробник: Microchip Technology
Description: DIODE GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V

Виробник: Microchip Technology
Description: DIODE GP 1.2KV 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V

Виробник: Microchip Technology
Description: DIODE GP 600V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V

Виробник: AG TERMOPASTY
Category: Thermoconductive tapes
Description: Tape: heat transfer; W: 18mm; L: 23mm; Thk: 0.3mm; 1.5W/mK; 5pcs.
Length: 23mm
Width: 18mm
Quantity in set/package: 5pcs.
Thickness: 0.3mm
Tape application: facilitates heat transfer; heatsink mounting
Version: double-sided
Type of tape: heat transfer
Thermal conductivity: 1.5W/mK

Виробник: WeEn Semiconductors
Description: DIODE ARRAY GP 200V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V

Виробник: Wakefield Thermal
Category: Heatsinks - equipment
Description: Heat transfer pad: ulTIMiFlux; TO247; L: 24.13mm; W: 19.05mm
Application: TO247
Colour: orange
Length: 24.13mm
Width: 19.05mm
Thickness: 76µm
Type of heat transfer pad: ulTIMiFlux

Виробник: WAKEFIELD THERMAL
Description: WAKEFIELD THERMAL - CD-02-05-247 - PHASE CHANGE THERMAL MATERIAL, TO247
tariffCode: 85479000
productTraceability: No
Spannungsfestigkeit: -
Leitendes Material: -
rohsCompliant: YES
Dicke: 0.0762mm
Außenlänge: 24.13mm
euEccn: NLR
Wärmewiderstand: 0.107°C/W
hazardous: false
rohsPhthalatesCompliant: YES
Wärmeleitfähigkeit: -
directShipCharge: 25
usEccn: EAR99
Außenbreite: 19.05mm
Produktpalette: ulTIMiFlux Series
SVHC: No SVHC (14-Jun-2023)

Виробник: Wakefield-Vette
Description: THERM PAD 24.13MMX19.05MM ORANGE
Packaging: Bulk
Color: Orange
Material: Phase Change Compound
Shape: Rectangular
Thickness: 0.0030" (0.076mm)
Type: Pad, Sheet
Usage: TO-247
Outline: 24.13mm x 19.05mm
Backing, Carrier: Polyimide
Part Status: Active

Виробник: WAKEFIELD THERMAL
Description: WAKEFIELD THERMAL - CD-02-05-247-3 - PHASE CHANGE PAD, TO247, 57.15 X 24.13MM
tariffCode: 85479000
productTraceability: No
Leitendes Material: -
rohsCompliant: YES
Dicke: 0.0762mm
Außenlänge: 57.15mm
euEccn: NLR
Wärmewiderstand: 0.107°C/W
hazardous: false
rohsPhthalatesCompliant: YES
Wärmeleitfähigkeit: -
directShipCharge: 25
Spezifischer Durchgangswiderstand: -
usEccn: EAR99
Außenbreite: 24.13mm
Produktpalette: ulTIMiFlux Series
SVHC: No SVHC (14-Jun-2023)

Виробник: WAKEFIELD THERMAL
Description: WAKEFIELD THERMAL - CD-02-05-247-N - PHASE CHANGE PAD, TO247, 24.13 X 19.1MM
tariffCode: 85479000
productTraceability: No
Leitendes Material: -
rohsCompliant: YES
Dicke: 0.0762mm
Außenlänge: 24.13mm
euEccn: NLR
Wärmewiderstand: 0.107°C/W
hazardous: false
rohsPhthalatesCompliant: YES
Wärmeleitfähigkeit: -
directShipCharge: 25
Spezifischer Durchgangswiderstand: -
usEccn: EAR99
Außenbreite: 19.1mm
Produktpalette: ulTIMiFlux Series
SVHC: No SVHC (14-Jun-2023)

Виробник: Ohmite
Description: CAMMING CLIP FOR TO-247
Packaging: Box
For Use With/Related Products: TO-247
Accessory Type: Clip, Cam

Виробник: Ohmite
Description: CAM CLIP FOR TO DEVICES
Packaging: Box
For Use With/Related Products: TO-247, TO-264
Accessory Type: Clip, Cam

Виробник: Ohmite
Description: HEATSINK TO-218,TO-220,TO-247
Packaging: Box
Material: Aluminum
Length: 1.500" (38.10mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.638" (41.60mm)
Package Cooled: TO-218, TO-220, TO-247
Attachment Method: Bolt On and PC Pin
Power Dissipation @ Temperature Rise: 10.0W @ 50°C
Thermal Resistance @ Forced Air Flow: 1.50°C/W @ 600 LFM
Thermal Resistance @ Natural: 3.80°C/W
Fin Height: 0.984" (25.00mm)
Material Finish: Black Anodized

Виробник: onsemi
IGBT Transistors 650V Field stop 4th generation mid speed IGBT with co-pack SiC diode

Виробник: ONSEMI
Description: ONSEMI - FGH60N60SFTU - IGBT,N CH,600V,120A,TO247
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

Виробник: onsemi
IGBT Transistors 1200V, 40A Trench Field Stop VII (FS7) Discrete IGBT in TO247-3L Packaging 1200V 40A FS7 Low Vcesat IGBT Discrete

Виробник: onsemi
IGBT Transistors 1200V, 100A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3 1200 V, 1.7 V, 100 A

Виробник: onsemi
IGBT Transistors 1200V, 140A Field Stop VII (FS7) Fast Discrete IGBT in Power TO247-3L Packaging 1200V 140A FS7 Fast IGBT Discrete

Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W

Виробник: Infineon Technologies
Description: IGBT 1200V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: -/260ns
Switching Energy: 750µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 288 W

Виробник: Infineon Technologies
IGBT Transistors INDUSTRY 14

Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W

Виробник: Infineon Technologies
IGBT Transistors INDUSTRY 14

Виробник: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET

Виробник: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET

Виробник: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET

Виробник: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET

Виробник: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET

Виробник: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET

Виробник: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET

Виробник: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET

Виробник: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 110A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 57A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 25 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V

Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V

Виробник: IXYS
IGBT Transistors IXYH30N120C4H1

Виробник: IXYS
IGBT Transistors IXYH40N120B4H1

Виробник: IXYS
IGBT Transistors IXYH40N120C4H1

Виробник: IXYS
IGBT Transistors IXYH55N120B4H1

Виробник: Boyd Laconia, LLC
Description: MAX CLIP TO-247/MAX247 HIGHFORCE
Packaging: Bulk
For Use With/Related Products: Max Clip System™
Accessory Type: Clip
Part Status: Active

Виробник: BOYD
Description: BOYD - MAX03-HNG - HIGH FORCE RAIL CLIP, 18MM, TO247
tariffCode: 76169990
productTraceability: No
Befestigungsart: Rail Clip
rohsCompliant: YES
Außenlänge: 14.7mm
euEccn: NLR
Netzsteckertyp: 0
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
Außenlänge/-höhe: 0
Zur Verwendung mit: TO-247/MAX247, TO-247J Packages
usEccn: EAR99
Außenbreite: 18mm
Produktpalette: Max Clip System Series
SVHC: No SVHC (15-Jan-2019)

Виробник: Boyd Laconia, LLC
Description: MAX CLIP TO-247/MAX247 STD-FORCE
Packaging: Bulk
For Use With/Related Products: Max Clip System™
Accessory Type: Clip
Part Status: Active

Виробник: BOYD
Description: BOYD - MAX08NG - HEATSINK CLIP, TO218/TO247/TO247J
tariffCode: 76169990
productTraceability: No
Befestigungsart: Clip
rohsCompliant: YES
Außenlänge: 23.5mm
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
Zur Verwendung mit: TO-218, TO-247/MAX247, TO-247J Packages
usEccn: EAR99
Außenbreite: 18mm
Produktpalette: Multicomp Pro RJ45 Adapter
SVHC: No SVHC (15-Jan-2019)