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1210N153G101CT 1210N153G101CT Walsin WTC_MLCC_General_Purpose-1534899.pdf Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 MLCC NPO 0.015 uF, +/- 2% 100 V T&R MH
товар відсутній
1210N153J101CT 1210N153J101CT Walsin Technology Corporation WTC_MLCC_General_Purpose.pdf Description: CAP CER 0.015UF 100V C0G 1210
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 100V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153J160CT 1210N153J160CT Walsin WTC_MLCC_General_Purpose-1534899.pdf Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 MLCC NPO 0.015 uF, +/- 5% 16 V T&R GP
товар відсутній
1210N153J160CT 1210N153J160CT Walsin Technology Corporation WTC_MLCC_General_Purpose.pdf Description: CAP CER 0.015UF 16V C0G/NP0 1210
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 16V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153J250CT 1210N153J250CT Walsin Technology Corporation WTC_MLCC_General_Purpose.pdf Description: CAP CER 0.015UF 25V C0G/NP0 1210
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 25V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153J500CT 1210N153J500CT Walsin WTC_MLCC_General_Purpose-1534899.pdf Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.015uF +-5% 50V
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1210N153J500CT 1210N153J500CT Walsin Technology Corporation WTC_MLCC_General_Purpose.pdf Description: CAP CER 0.015UF 50V C0G/NP0 1210
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 50V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153J631CT 1210N153J631CT WALSIN ASC_General_Purpose.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 15nF; 630V; C0G (NP0); ±5%; SMD; 1210
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±5%
Operating voltage: 630V
Capacitance: 15nF
Kind of capacitor: MLCC
Dielectric: C0G (NP0)
Case - mm: 3225
Case - inch: 1210
Type of capacitor: ceramic
товар відсутній
1210N153J631CT 1210N153J631CT WALSIN ASC_General_Purpose.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 15nF; 630V; C0G (NP0); ±5%; SMD; 1210
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±5%
Operating voltage: 630V
Capacitance: 15nF
Kind of capacitor: MLCC
Dielectric: C0G (NP0)
Case - mm: 3225
Case - inch: 1210
Type of capacitor: ceramic
кількість в упаковці: 1000 шт
товар відсутній
1210N153K101CT 1210N153K101CT Walsin Technology Corporation WTC_MLCC_General_Purpose.pdf Description: CAP CER 0.015UF 100V C0G 1210
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Voltage - Rated: 100V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153K160CT 1210N153K160CT Walsin Technology Corporation WTC_MLCC_General_Purpose.pdf Description: CAP CER 0.015UF 16V C0G/NP0 1210
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Voltage - Rated: 16V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153K160CT 1210N153K160CT Walsin WTC_MLCC_General_Purpose-1534899.pdf Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 MLCC NPO 0.015 uF, +/- 10% 16 V T&R GP
товар відсутній
1210N153K500CT 1210N153K500CT Walsin Technology Corporation WTC_MLCC_General_Purpose.pdf Description: CAP CER 0.015UF 50V C0G/NP0 1210
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Voltage - Rated: 50V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
500S010N15H08 Glenair D-Sub Backshells CLOSE TOLERANCE - MICRO-D BACKSHELLS
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BSC110N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 48A
Pulsed drain current: 304A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSC110N15NS5SCATMA1 Infineon Technologies infineon-bsc110n15ns5sc-datasheet-v02_01-en.pdf SP005561075
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C1210N152F1GSL7185 KEMET c1210n152f1gsl7189.pdf Cap Ceramic 1500pF 100V C0G 1% SMD 1210 (0.001%FR) 125°C Bag
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C1210N152J1GRL7185 KEMET f3102_mil-prf-55681.pdf Tantalum, Ceramic And Aluminum Chip Capacitors
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C1210N152J1GRL7189 KEMET f3102_mil-prf-55681.pdf Cap Ceramic 0.0015uF 100V BP 5% Pad SMD 1210 (0.01%FR) 125C T/R
товар відсутній
C1210N152K1GRH7189 C1210N152K1GRH7189 KEMET f3102_mil-prf-55681.pdf Cap Ceramic 0.0015uF 100V BP 10% Pad SMD 1210 (0.01%FR) 125C T/R
товар відсутній
C1210N152K1GSL7185 C1210N152K1GSL7185 KEMET f3102_mil-prf-55681.pdf Cap Ceramic 0.0015uF 100V BP 10% Pad SMD 1210 (0.001%FR) 125C T/R
товар відсутній
C1210N153K1XML7189 KEMET f3102_mil-prf-55681.pdf Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (1%FR) 125C T/R
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C1210N153K1XRH C1210N153K1XRH KEMET f3102_mil-prf-55681.pdf Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.01%FR) 125C Bulk
товар відсутній
C1210N153K1XRH7185 C1210N153K1XRH7185 KEMET f3102_mil-prf-55681.pdf Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.01%FR) 125C T/R
товар відсутній
C1210N153K1XRL C1210N153K1XRL KEMET f3102_mil-prf-55681.pdf Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.01%FR) 125C Bulk
товар відсутній
C1210N153K1XRL7189 C1210N153K1XRL7189 KEMET f3102_mil-prf-55681.pdf Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.01%FR) 125C T/R
товар відсутній
C1210N153K1XSL7185 C1210N153K1XSL7185 KEMET f3102_mil-prf-55681.pdf Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.001%FR) 125C T/R
товар відсутній
C1210N153K1XSL7189 C1210N153K1XSL7189 KEMET f3102_mil-prf-55681.pdf Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.001%FR) 125C T/R
товар відсутній
DI110N15PQ DI110N15PQ DIOTEC SEMICONDUCTOR di110n15pq.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 56W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 56W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
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DI110N15PQ DI110N15PQ Diotec Semiconductor di110n15pq.pdf MOSFET MOSFET, PowerQFN 5x6, 150V, 110A, 150C, N
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DI110N15PQ Diotec Semiconductor di110n15pq.pdf MOSFET, PowerQFN 5x6, 150V, 110A, 0, 56W
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DI110N15PQ-AQ DI110N15PQ-AQ DIOTEC SEMICONDUCTOR di110n15pq.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI110N15PQ-AQ DI110N15PQ-AQ DIOTEC SEMICONDUCTOR di110n15pq.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI110N15PQ-Q DIOTEC SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI110N15PQ-Q DIOTEC SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DR0810N-152-P-T Дроссель 1500 мкГн ±10%, Idcmax=0,314 А, Rdc-max=2,30 Ом, D=8,8 мм H=10,8 мм NiZn, в TST, выводы DIP, d=0,5 мм
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DR1010N-151-P-T Дроссель 150 мкГн ±10%, Idcmax=1,59 А, Rdc-max=0,18 Ом, D=10,8 мм H=10,8 мм NiZn, в TST, выводы DIP, d=0,5 мм
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DR1010N-152-P-T Дроссель 1500 мкГн ±10%, Idcmax=0,491 А, Rdc-max=1,49 Ом, D=10,8 мм H=10,8 мм NiZn, в TST, выводы DIP, d=0,5 мм
товар відсутній
FDB110N15A ONSEMI ONSM-S-A0003584030-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 65A
Pulsed drain current: 369A
Power dissipation: 234W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
FDB110N15A ONSEMI ONSM-S-A0003584030-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 65A
Pulsed drain current: 369A
Power dissipation: 234W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDB110N15A FDB110N15A ON Semiconductor fdb110n15a.pdf Trans MOSFET N-CH 150V 92A 3-Pin(2+Tab) D2PAK T/R
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IXFA110N15T2 IXFA110N15T2 Littelfuse mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf Trans MOSFET N-CH 150V 110A 3-Pin(2+Tab) D2PAK
товар відсутній
IXFA110N15T2-TRL IXFA110N15T2-TRL IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_-1621764.pdf MOSFET IXFA110N15T2 TRL
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IXFH110N15T2 IXFH110N15T2 IXYS IXFH110N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
товар відсутній
IXFH110N15T2 IXFH110N15T2 IXYS IXFH110N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
кількість в упаковці: 1 шт
товар відсутній
IXFH110N15T2 IXFH110N15T2 Littelfuse mosfets_n-channel_trench_gate_ixfh110n15t2_datasheet.pdf.pdf Trans MOSFET N-CH 150V 110A 3-Pin(3+Tab) TO-247
товар відсутній
IXFH110N15T2 IXFH110N15T2 IXYS media-3320128.pdf MOSFET 110 Amps 150V
товар відсутній
IXFP110N15T2 IXFP110N15T2 IXYS IXFA(P)110N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO220AB; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
товар відсутній
IXFP110N15T2 IXFP110N15T2 IXYS IXFA(P)110N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO220AB; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
кількість в упаковці: 1 шт
товар відсутній
IXFP110N15T2 IXFP110N15T2 Littelfuse mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf Trans MOSFET N-CH 150V 110A 3-Pin(3+Tab) TO-220AB
товар відсутній
IXFP110N15T2 IXFP110N15T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf Description: MOSFET N-CH 150V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
JVR10N151K85PU5 JOYIN JVR-N-series.pdf Category: THT varistors
Description: Varistor: zinc-oxide; THT; 95VAC; 125VDC; 150V; 2.5kA; 22J; 400mW
Power: 0.4W
Mounting: THT
Kind of package: bag
Manufacturer series: STANDARD
Energy E10/1000µs: 22J
Max. operating voltage: 95V AC; 125V DC
Varistor voltage: 150V
Type of varistor: zinc-oxide
Tolerance: ±10%
Max body dimensions: Ø10mm
Terminal pitch: 5mm
Leads: straight
Varistor max current 8/20µs: 2.5kA
товар відсутній
JVR10N151K85PU5 JOYIN JVR-N-series.pdf Category: THT varistors
Description: Varistor: zinc-oxide; THT; 95VAC; 125VDC; 150V; 2.5kA; 22J; 400mW
Power: 0.4W
Mounting: THT
Kind of package: bag
Manufacturer series: STANDARD
Energy E10/1000µs: 22J
Max. operating voltage: 95V AC; 125V DC
Varistor voltage: 150V
Type of varistor: zinc-oxide
Tolerance: ±10%
Max body dimensions: Ø10mm
Terminal pitch: 5mm
Leads: straight
Varistor max current 8/20µs: 2.5kA
кількість в упаковці: 10000 шт
товар відсутній
JVR10N151K87PU5 JOYIN JVR-N-series.pdf Category: THT varistors
Description: Varistor: zinc-oxide; THT; 95VAC; 125VDC; 150V; 2.5kA; 22J; 400mW
Power: 0.4W
Mounting: THT
Kind of package: bag
Manufacturer series: STANDARD
Energy E10/1000µs: 22J
Max. operating voltage: 95V AC; 125V DC
Varistor voltage: 150V
Type of varistor: zinc-oxide
Tolerance: ±10%
Max body dimensions: Ø10mm
Terminal pitch: 7.5mm
Leads: straight
Varistor max current 8/20µs: 2.5kA
товар відсутній
JVR10N151K87PU5 JOYIN JVR-N-series.pdf Category: THT varistors
Description: Varistor: zinc-oxide; THT; 95VAC; 125VDC; 150V; 2.5kA; 22J; 400mW
Power: 0.4W
Mounting: THT
Kind of package: bag
Manufacturer series: STANDARD
Energy E10/1000µs: 22J
Max. operating voltage: 95V AC; 125V DC
Varistor voltage: 150V
Type of varistor: zinc-oxide
Tolerance: ±10%
Max body dimensions: Ø10mm
Terminal pitch: 7.5mm
Leads: straight
Varistor max current 8/20µs: 2.5kA
кількість в упаковці: 10000 шт
товар відсутній
LQA10N150C LQA10N150C Power Integrations LQA10T150C_LQA10N150C-3105532.pdf Rectifiers 150V, Dual, 5A Ultra-Low Qrr Rect
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NTHS0603N10N1582JE NTHS0603N10N1582JE Vishay Dale nths.pdf Description: THERM NTC 15.8KOHM 3500K 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 15.8k
Resistance Tolerance: ±5%
B25/75: 3500K
Part Status: Obsolete
товар відсутній
NTHS1206N10N1502JE NTHS1206N10N1502JE Vishay nths.pdf Thermistor NTC 15K Ohm 5% 2-Pin 1206 Surface Mount Solder Pad 3500K -4 to -3.5 T/R Automotive
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RP110N151B-TR-FE RP110N151B-TR-FE Nisshinbo Micro Devices Inc. rp110-ea.pdf Description: IC REG LINEAR 1.5V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.8V @ 150mA
Protection Features: Over Current
товар відсутній
RP110N151B-TR-FE RP110N151B-TR-FE Nisshinbo rp110_ea-3218689.pdf LDO Voltage Regulators Low voltage Low supply current LDO Regulator
товар відсутній
1210N153G101CT WTC_MLCC_General_Purpose-1534899.pdf
1210N153G101CT
Виробник: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 MLCC NPO 0.015 uF, +/- 2% 100 V T&R MH
товар відсутній
1210N153J101CT WTC_MLCC_General_Purpose.pdf
1210N153J101CT
Виробник: Walsin Technology Corporation
Description: CAP CER 0.015UF 100V C0G 1210
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 100V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153J160CT WTC_MLCC_General_Purpose-1534899.pdf
1210N153J160CT
Виробник: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 MLCC NPO 0.015 uF, +/- 5% 16 V T&R GP
товар відсутній
1210N153J160CT WTC_MLCC_General_Purpose.pdf
1210N153J160CT
Виробник: Walsin Technology Corporation
Description: CAP CER 0.015UF 16V C0G/NP0 1210
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 16V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153J250CT WTC_MLCC_General_Purpose.pdf
1210N153J250CT
Виробник: Walsin Technology Corporation
Description: CAP CER 0.015UF 25V C0G/NP0 1210
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 25V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153J500CT WTC_MLCC_General_Purpose-1534899.pdf
1210N153J500CT
Виробник: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.015uF +-5% 50V
товар відсутній
1210N153J500CT WTC_MLCC_General_Purpose.pdf
1210N153J500CT
Виробник: Walsin Technology Corporation
Description: CAP CER 0.015UF 50V C0G/NP0 1210
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 50V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153J631CT ASC_General_Purpose.pdf
1210N153J631CT
Виробник: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 15nF; 630V; C0G (NP0); ±5%; SMD; 1210
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±5%
Operating voltage: 630V
Capacitance: 15nF
Kind of capacitor: MLCC
Dielectric: C0G (NP0)
Case - mm: 3225
Case - inch: 1210
Type of capacitor: ceramic
товар відсутній
1210N153J631CT ASC_General_Purpose.pdf
1210N153J631CT
Виробник: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 15nF; 630V; C0G (NP0); ±5%; SMD; 1210
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±5%
Operating voltage: 630V
Capacitance: 15nF
Kind of capacitor: MLCC
Dielectric: C0G (NP0)
Case - mm: 3225
Case - inch: 1210
Type of capacitor: ceramic
кількість в упаковці: 1000 шт
товар відсутній
1210N153K101CT WTC_MLCC_General_Purpose.pdf
1210N153K101CT
Виробник: Walsin Technology Corporation
Description: CAP CER 0.015UF 100V C0G 1210
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Voltage - Rated: 100V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153K160CT WTC_MLCC_General_Purpose.pdf
1210N153K160CT
Виробник: Walsin Technology Corporation
Description: CAP CER 0.015UF 16V C0G/NP0 1210
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Voltage - Rated: 16V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
1210N153K160CT WTC_MLCC_General_Purpose-1534899.pdf
1210N153K160CT
Виробник: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 MLCC NPO 0.015 uF, +/- 10% 16 V T&R GP
товар відсутній
1210N153K500CT WTC_MLCC_General_Purpose.pdf
1210N153K500CT
Виробник: Walsin Technology Corporation
Description: CAP CER 0.015UF 50V C0G/NP0 1210
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Voltage - Rated: 50V
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.053" (1.35mm)
Capacitance: 0.015 µF
товар відсутній
500S010N15H08
Виробник: Glenair
D-Sub Backshells CLOSE TOLERANCE - MICRO-D BACKSHELLS
товар відсутній
BSC110N15NS5ATMA1 Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 48A
Pulsed drain current: 304A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSC110N15NS5SCATMA1 infineon-bsc110n15ns5sc-datasheet-v02_01-en.pdf
Виробник: Infineon Technologies
SP005561075
товар відсутній
C1210N152F1GSL7185 c1210n152f1gsl7189.pdf
Виробник: KEMET
Cap Ceramic 1500pF 100V C0G 1% SMD 1210 (0.001%FR) 125°C Bag
товар відсутній
C1210N152J1GRL7185 f3102_mil-prf-55681.pdf
Виробник: KEMET
Tantalum, Ceramic And Aluminum Chip Capacitors
товар відсутній
C1210N152J1GRL7189 f3102_mil-prf-55681.pdf
Виробник: KEMET
Cap Ceramic 0.0015uF 100V BP 5% Pad SMD 1210 (0.01%FR) 125C T/R
товар відсутній
C1210N152K1GRH7189 f3102_mil-prf-55681.pdf
C1210N152K1GRH7189
Виробник: KEMET
Cap Ceramic 0.0015uF 100V BP 10% Pad SMD 1210 (0.01%FR) 125C T/R
товар відсутній
C1210N152K1GSL7185 f3102_mil-prf-55681.pdf
C1210N152K1GSL7185
Виробник: KEMET
Cap Ceramic 0.0015uF 100V BP 10% Pad SMD 1210 (0.001%FR) 125C T/R
товар відсутній
C1210N153K1XML7189 f3102_mil-prf-55681.pdf
Виробник: KEMET
Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (1%FR) 125C T/R
товар відсутній
C1210N153K1XRH f3102_mil-prf-55681.pdf
C1210N153K1XRH
Виробник: KEMET
Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.01%FR) 125C Bulk
товар відсутній
C1210N153K1XRH7185 f3102_mil-prf-55681.pdf
C1210N153K1XRH7185
Виробник: KEMET
Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.01%FR) 125C T/R
товар відсутній
C1210N153K1XRL f3102_mil-prf-55681.pdf
C1210N153K1XRL
Виробник: KEMET
Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.01%FR) 125C Bulk
товар відсутній
C1210N153K1XRL7189 f3102_mil-prf-55681.pdf
C1210N153K1XRL7189
Виробник: KEMET
Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.01%FR) 125C T/R
товар відсутній
C1210N153K1XSL7185 f3102_mil-prf-55681.pdf
C1210N153K1XSL7185
Виробник: KEMET
Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.001%FR) 125C T/R
товар відсутній
C1210N153K1XSL7189 f3102_mil-prf-55681.pdf
C1210N153K1XSL7189
Виробник: KEMET
Cap Ceramic 0.015uF 100V BX 10% Pad SMD 1210 (0.001%FR) 125C T/R
товар відсутній
DI110N15PQ di110n15pq.pdf
DI110N15PQ
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 56W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 56W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
DI110N15PQ di110n15pq.pdf
DI110N15PQ
Виробник: Diotec Semiconductor
MOSFET MOSFET, PowerQFN 5x6, 150V, 110A, 150C, N
товар відсутній
DI110N15PQ di110n15pq.pdf
Виробник: Diotec Semiconductor
MOSFET, PowerQFN 5x6, 150V, 110A, 0, 56W
товар відсутній
DI110N15PQ-AQ di110n15pq.pdf
DI110N15PQ-AQ
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI110N15PQ-AQ di110n15pq.pdf
DI110N15PQ-AQ
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI110N15PQ-Q
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
DI110N15PQ-Q
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DR0810N-152-P-T
Дроссель 1500 мкГн ±10%, Idcmax=0,314 А, Rdc-max=2,30 Ом, D=8,8 мм H=10,8 мм NiZn, в TST, выводы DIP, d=0,5 мм
товар відсутній
DR1010N-151-P-T
Дроссель 150 мкГн ±10%, Idcmax=1,59 А, Rdc-max=0,18 Ом, D=10,8 мм H=10,8 мм NiZn, в TST, выводы DIP, d=0,5 мм
товар відсутній
DR1010N-152-P-T
Дроссель 1500 мкГн ±10%, Idcmax=0,491 А, Rdc-max=1,49 Ом, D=10,8 мм H=10,8 мм NiZn, в TST, выводы DIP, d=0,5 мм
товар відсутній
FDB110N15A ONSM-S-A0003584030-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 65A
Pulsed drain current: 369A
Power dissipation: 234W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
FDB110N15A ONSM-S-A0003584030-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 65A
Pulsed drain current: 369A
Power dissipation: 234W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDB110N15A fdb110n15a.pdf
FDB110N15A
Виробник: ON Semiconductor
Trans MOSFET N-CH 150V 92A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXFA110N15T2 mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf
IXFA110N15T2
Виробник: Littelfuse
Trans MOSFET N-CH 150V 110A 3-Pin(2+Tab) D2PAK
товар відсутній
IXFA110N15T2-TRL Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_-1621764.pdf
IXFA110N15T2-TRL
Виробник: IXYS
MOSFET IXFA110N15T2 TRL
товар відсутній
IXFH110N15T2 IXFH110N15T2.pdf
IXFH110N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
товар відсутній
IXFH110N15T2 IXFH110N15T2.pdf
IXFH110N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
кількість в упаковці: 1 шт
товар відсутній
IXFH110N15T2 mosfets_n-channel_trench_gate_ixfh110n15t2_datasheet.pdf.pdf
IXFH110N15T2
Виробник: Littelfuse
Trans MOSFET N-CH 150V 110A 3-Pin(3+Tab) TO-247
товар відсутній
IXFH110N15T2 media-3320128.pdf
IXFH110N15T2
Виробник: IXYS
MOSFET 110 Amps 150V
товар відсутній
IXFP110N15T2 IXFA(P)110N15T2.pdf
IXFP110N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO220AB; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
товар відсутній
IXFP110N15T2 IXFA(P)110N15T2.pdf
IXFP110N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO220AB; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
кількість в упаковці: 1 шт
товар відсутній
IXFP110N15T2 mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf
IXFP110N15T2
Виробник: Littelfuse
Trans MOSFET N-CH 150V 110A 3-Pin(3+Tab) TO-220AB
товар відсутній
IXFP110N15T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf
IXFP110N15T2
Виробник: IXYS
Description: MOSFET N-CH 150V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
JVR10N151K85PU5 JVR-N-series.pdf
Виробник: JOYIN
Category: THT varistors
Description: Varistor: zinc-oxide; THT; 95VAC; 125VDC; 150V; 2.5kA; 22J; 400mW
Power: 0.4W
Mounting: THT
Kind of package: bag
Manufacturer series: STANDARD
Energy E10/1000µs: 22J
Max. operating voltage: 95V AC; 125V DC
Varistor voltage: 150V
Type of varistor: zinc-oxide
Tolerance: ±10%
Max body dimensions: Ø10mm
Terminal pitch: 5mm
Leads: straight
Varistor max current 8/20µs: 2.5kA
товар відсутній
JVR10N151K85PU5 JVR-N-series.pdf
Виробник: JOYIN
Category: THT varistors
Description: Varistor: zinc-oxide; THT; 95VAC; 125VDC; 150V; 2.5kA; 22J; 400mW
Power: 0.4W
Mounting: THT
Kind of package: bag
Manufacturer series: STANDARD
Energy E10/1000µs: 22J
Max. operating voltage: 95V AC; 125V DC
Varistor voltage: 150V
Type of varistor: zinc-oxide
Tolerance: ±10%
Max body dimensions: Ø10mm
Terminal pitch: 5mm
Leads: straight
Varistor max current 8/20µs: 2.5kA
кількість в упаковці: 10000 шт
товар відсутній
JVR10N151K87PU5 JVR-N-series.pdf
Виробник: JOYIN
Category: THT varistors
Description: Varistor: zinc-oxide; THT; 95VAC; 125VDC; 150V; 2.5kA; 22J; 400mW
Power: 0.4W
Mounting: THT
Kind of package: bag
Manufacturer series: STANDARD
Energy E10/1000µs: 22J
Max. operating voltage: 95V AC; 125V DC
Varistor voltage: 150V
Type of varistor: zinc-oxide
Tolerance: ±10%
Max body dimensions: Ø10mm
Terminal pitch: 7.5mm
Leads: straight
Varistor max current 8/20µs: 2.5kA
товар відсутній
JVR10N151K87PU5 JVR-N-series.pdf
Виробник: JOYIN
Category: THT varistors
Description: Varistor: zinc-oxide; THT; 95VAC; 125VDC; 150V; 2.5kA; 22J; 400mW
Power: 0.4W
Mounting: THT
Kind of package: bag
Manufacturer series: STANDARD
Energy E10/1000µs: 22J
Max. operating voltage: 95V AC; 125V DC
Varistor voltage: 150V
Type of varistor: zinc-oxide
Tolerance: ±10%
Max body dimensions: Ø10mm
Terminal pitch: 7.5mm
Leads: straight
Varistor max current 8/20µs: 2.5kA
кількість в упаковці: 10000 шт
товар відсутній
LQA10N150C LQA10T150C_LQA10N150C-3105532.pdf
LQA10N150C
Виробник: Power Integrations
Rectifiers 150V, Dual, 5A Ultra-Low Qrr Rect
товар відсутній
NTHS0603N10N1582JE nths.pdf
NTHS0603N10N1582JE
Виробник: Vishay Dale
Description: THERM NTC 15.8KOHM 3500K 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 15.8k
Resistance Tolerance: ±5%
B25/75: 3500K
Part Status: Obsolete
товар відсутній
NTHS1206N10N1502JE nths.pdf
NTHS1206N10N1502JE
Виробник: Vishay
Thermistor NTC 15K Ohm 5% 2-Pin 1206 Surface Mount Solder Pad 3500K -4 to -3.5 T/R Automotive
товар відсутній
RP110N151B-TR-FE rp110-ea.pdf
RP110N151B-TR-FE
Виробник: Nisshinbo Micro Devices Inc.
Description: IC REG LINEAR 1.5V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.8V @ 150mA
Protection Features: Over Current
товар відсутній
RP110N151B-TR-FE rp110_ea-3218689.pdf
RP110N151B-TR-FE
Виробник: Nisshinbo
LDO Voltage Regulators Low voltage Low supply current LDO Regulator
товар відсутній
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