Результат пошуку "12N50" : > 180
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
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CHV1812N500103JCT | Cal-Chip Electronics, Inc. |
 Description: HVCAP1812 COG .01UF 5% 500VPackaging: Cut Tape (CT) Tolerance: ±5% Features: High Voltage Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 10000 pF |
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CHV1812N500103KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .01UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 10000 pF |
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CHV1812N500104KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .1UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.1 µF |
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CHV1812N500104MXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .1UF 20% 500V Tolerance: ±20% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.1 µF |
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CHV1812N500153KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .015UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.015 µF |
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CHV1812N500154KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .15UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.15 µF |
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CHV1812N500221JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 COG 220PF 5% 500V Packaging: Tape & Reel (TR) Tolerance: ±5% Features: High Voltage Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 220 pF |
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CHV1812N500222JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 COG 2200PF 5% 500V Tolerance: ±5% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 2200 pF |
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CHV1812N500223KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .022UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.022 µF |
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CHV1812N500224KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .22UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.22 µF |
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CHV1812N500331JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 COG 330PF 5% 500V Tolerance: ±5% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 330 pF |
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CHV1812N500332JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP 1812 COG 3300PF 5% 500V Packaging: Cut Tape (CT) Tolerance: ±5% Features: High Voltage Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 3300 pF |
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CHV1812N500334KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .33UF 10% 500V Packaging: Cut Tape (CT) |
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CHV1812N500472JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 COG 4700PF 5% 500V Tolerance: ±5% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 4700 pF |
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CHV1812N500472KCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 COG 4700PF 10% 500V Packaging: Cut Tape (CT) Tolerance: ±10% Features: High Voltage Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 4700 pF |
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CHV1812N500473KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .047UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.047 µF |
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CHV1812N500474KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .47UF 10% 500V Packaging: Tape & Reel (TR) |
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FDB12N50FTM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Pulsed drain current: 46A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
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FDB12N50FTM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Pulsed drain current: 46A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDB12N50FTM-WS | ON Semiconductor |
Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R |
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| FDB12N50TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Pulsed drain current: 46A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDB12N50TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Pulsed drain current: 46A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDB12N50TM | ON Semiconductor |
Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R |
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FDB12N50UTM-WS | ON Semiconductor |
Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R |
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FDP12N50 | ON Semiconductor |
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220 Tube |
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FDP12N50NZ | ON Semiconductor |
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220 Tube |
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FDPF12N50FT | ON Semiconductor |
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220FP Tube |
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FDPF12N50NZ | ON Semiconductor |
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220FP Tube |
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FDPF12N50T | ON Semiconductor |
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220FP Tube |
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FDPF12N50UT | ON Semiconductor |
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220FP Tube |
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| FHDM 12N5001 | BAUMER |
Category: Standard Photoelectric Sensors Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON Operating temperature: -25...65°C Operation mode: diffuse-reflective Range: 15...300mm Operation modes: DARK-ON; LIGHT-ON Output configuration: NPN Connection: lead 2m Sensors features: background impact elimination; sensitivity adjustable Response time: <1ms Type of sensor: photoelectric Supply voltage: 10...30V DC Body material: metal Body dimensions: 12.4x35x35mm IP rating: IP67 Max. operating current: 0.1A |
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| FHDM 12N5001 | BAUMER |
Category: Standard Photoelectric Sensors Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON Operating temperature: -25...65°C Operation mode: diffuse-reflective Range: 15...300mm Operation modes: DARK-ON; LIGHT-ON Output configuration: NPN Connection: lead 2m Sensors features: background impact elimination; sensitivity adjustable Response time: <1ms Type of sensor: photoelectric Supply voltage: 10...30V DC Body material: metal Body dimensions: 12.4x35x35mm IP rating: IP67 Max. operating current: 0.1A кількість в упаковці: 1 шт |
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FHDM 12N5001/S35A | BAUMER |
Category: Standard Photoelectric Sensors Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON Operating temperature: -25...65°C Operation mode: diffuse-reflective Range: 15...300mm Operation modes: DARK-ON; LIGHT-ON Output configuration: NPN Connection: connector M8 Sensors features: background impact elimination; sensitivity adjustable Response time: <1ms Type of sensor: photoelectric Supply voltage: 10...30V DC Number of pins: 4 Body material: metal Body dimensions: 12.4x35x35mm IP rating: IP67 Max. operating current: 0.1A |
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FHDM 12N5001/S35A | BAUMER |
Category: Standard Photoelectric Sensors Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON Operating temperature: -25...65°C Operation mode: diffuse-reflective Range: 15...300mm Operation modes: DARK-ON; LIGHT-ON Output configuration: NPN Connection: connector M8 Sensors features: background impact elimination; sensitivity adjustable Response time: <1ms Type of sensor: photoelectric Supply voltage: 10...30V DC Number of pins: 4 Body material: metal Body dimensions: 12.4x35x35mm IP rating: IP67 Max. operating current: 0.1A кількість в упаковці: 1 шт |
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IXFA12N50P | IXYS |
Description: MOSFET N-CH 500V 12A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V |
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IXFA12N50P | Littelfuse |
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK |
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IXFA12N50P TRL | Littelfuse |
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R |
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IXFA12N50P-TRL | IXYS |
MOSFET IXFA12N50P TRL |
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IXFH12N50F | Littelfuse |
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-247AD |
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IXFP12N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO220AB On-state resistance: 0.5Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced |
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IXFP12N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO220AB On-state resistance: 0.5Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFP12N50P | Littelfuse |
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB |
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IXTA12N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
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IXTA12N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns кількість в упаковці: 1 шт |
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IXTA12N50P | Littelfuse |
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK |
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IXTP12N50P | Littelfuse |
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 |
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IXTP12N50P | IXYS |
MOSFET 12 Amps 500V 0.5 Ohm Rds |
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IXTP12N50PM | IXYS |
MOSFET 12.0 Amps 500 V 0.5 Ohm Rds |
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| MOCB-12-N-50A | OPTIFUSE |
Category: Other Car Fuses Description: Fuse: fuse; 50A; 12VDC; automotive; 31.8x20.51x15.49mm Manufacturer series: Automotive Type II Current rating: 50A Fuse size: 31.8x20.51x15.49mm Kind of fuse: automotive Rated voltage: 12V DC Type of fuse: fuse кількість в упаковці: 100 шт |
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NB12N50683KBB | KYOCERA AVX |
NTC (Negative Temperature Coefficient) Thermistors |
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NB12N50683KBB | Kyocera AVX Components |
Thermistor NTC 68K Ohm 10% 2-Pin 0805 Surface Mount Solder Pad 4160K -5 to -4.5 T/R |
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NTB12N50 | ON Semiconductor |
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK Rail |
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R3112N501A-TR-FE | Nisshinbo Micro Devices Inc. |
Description: IC SUPERVISOR 1 CHANNEL SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 85°C Number of Voltages Monitored: 1 Voltage - Threshold: 5V Supplier Device Package: SOT-23-5 DigiKey Programmable: Not Verified |
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R3112N501A-TR-FE | Nisshinbo |
Supervisory Circuits Low Voltage Detector with output delay (output capacitor type) |
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R3112N501C-TR-FE | Nisshinbo |
Supervisory Circuits Low Voltage Detector with output delay (output capacitor type) |
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RM12N500T2 | Rectron |
MOSFET MOSFET TO-220 |
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| SIHA12N50E-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.6A Pulsed drain current: 21A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced |
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| SIHA12N50E-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.6A Pulsed drain current: 21A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHA12N50E-E3 | Vishay |
Trans MOSFET N-CH 500V 10.5A 3-Pin(3+Tab) TO-220FP |
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SIHA12N50E-GE3 | Vishay Siliconix |
Description: N-CHANNEL 500V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V |
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Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG .01UF 5% 500V
Packaging: Cut Tape (CT)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10000 pF
Description: HVCAP1812 COG .01UF 5% 500V
Packaging: Cut Tape (CT)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10000 pF
товар відсутній
| CHV1812N500103KXT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .01UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 10000 pF
Description: HVCAP1812 X7R .01UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 10000 pF
товар відсутній
| CHV1812N500104KXT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
Description: HVCAP1812 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
товар відсутній
| CHV1812N500104MXT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .1UF 20% 500V
Tolerance: ±20%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
Description: HVCAP1812 X7R .1UF 20% 500V
Tolerance: ±20%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
товар відсутній
| CHV1812N500153KXT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .015UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.015 µF
Description: HVCAP1812 X7R .015UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.015 µF
товар відсутній
| CHV1812N500154KXT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .15UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.15 µF
Description: HVCAP1812 X7R .15UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.15 µF
товар відсутній
| CHV1812N500221JCT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 220PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 220 pF
Description: HVCAP1812 COG 220PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 220 pF
товар відсутній
| CHV1812N500222JCT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 2200PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 2200 pF
Description: HVCAP1812 COG 2200PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 2200 pF
товар відсутній
| CHV1812N500223KXT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .022UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.022 µF
Description: HVCAP1812 X7R .022UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.022 µF
товар відсутній
| CHV1812N500224KXT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .22UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.22 µF
Description: HVCAP1812 X7R .22UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.22 µF
товар відсутній
| CHV1812N500331JCT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 330PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 330 pF
Description: HVCAP1812 COG 330PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 330 pF
товар відсутній
| CHV1812N500332JCT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP 1812 COG 3300PF 5% 500V
Packaging: Cut Tape (CT)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 3300 pF
Description: HVCAP 1812 COG 3300PF 5% 500V
Packaging: Cut Tape (CT)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 3300 pF
товар відсутній
| CHV1812N500334KXT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .33UF 10% 500V
Packaging: Cut Tape (CT)
Description: HVCAP1812 X7R .33UF 10% 500V
Packaging: Cut Tape (CT)
товар відсутній
| CHV1812N500472JCT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 4700PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
Description: HVCAP1812 COG 4700PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
товар відсутній
| CHV1812N500472KCT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 4700PF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
Description: HVCAP1812 COG 4700PF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
товар відсутній
| CHV1812N500473KXT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .047UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.047 µF
Description: HVCAP1812 X7R .047UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.047 µF
товар відсутній
| CHV1812N500474KXT |
|
Виробник: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .47UF 10% 500V
Packaging: Tape & Reel (TR)
Description: HVCAP1812 X7R .47UF 10% 500V
Packaging: Tape & Reel (TR)
товар відсутній
| FDB12N50FTM-WS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDB12N50FTM-WS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDB12N50FTM-WS |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
| FDB12N50TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDB12N50TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDB12N50TM |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
| FDB12N50UTM-WS |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
| FDP12N50 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| FDP12N50NZ |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| FDPF12N50FT |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| FDPF12N50NZ |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| FDPF12N50T |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| FDPF12N50UT |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| FHDM 12N5001 |
|
Виробник: BAUMER
Category: Standard Photoelectric Sensors
Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON
Operating temperature: -25...65°C
Operation mode: diffuse-reflective
Range: 15...300mm
Operation modes: DARK-ON; LIGHT-ON
Output configuration: NPN
Connection: lead 2m
Sensors features: background impact elimination; sensitivity adjustable
Response time: <1ms
Type of sensor: photoelectric
Supply voltage: 10...30V DC
Body material: metal
Body dimensions: 12.4x35x35mm
IP rating: IP67
Max. operating current: 0.1A
Category: Standard Photoelectric Sensors
Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON
Operating temperature: -25...65°C
Operation mode: diffuse-reflective
Range: 15...300mm
Operation modes: DARK-ON; LIGHT-ON
Output configuration: NPN
Connection: lead 2m
Sensors features: background impact elimination; sensitivity adjustable
Response time: <1ms
Type of sensor: photoelectric
Supply voltage: 10...30V DC
Body material: metal
Body dimensions: 12.4x35x35mm
IP rating: IP67
Max. operating current: 0.1A
товар відсутній
| FHDM 12N5001 |
|
Виробник: BAUMER
Category: Standard Photoelectric Sensors
Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON
Operating temperature: -25...65°C
Operation mode: diffuse-reflective
Range: 15...300mm
Operation modes: DARK-ON; LIGHT-ON
Output configuration: NPN
Connection: lead 2m
Sensors features: background impact elimination; sensitivity adjustable
Response time: <1ms
Type of sensor: photoelectric
Supply voltage: 10...30V DC
Body material: metal
Body dimensions: 12.4x35x35mm
IP rating: IP67
Max. operating current: 0.1A
кількість в упаковці: 1 шт
Category: Standard Photoelectric Sensors
Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON
Operating temperature: -25...65°C
Operation mode: diffuse-reflective
Range: 15...300mm
Operation modes: DARK-ON; LIGHT-ON
Output configuration: NPN
Connection: lead 2m
Sensors features: background impact elimination; sensitivity adjustable
Response time: <1ms
Type of sensor: photoelectric
Supply voltage: 10...30V DC
Body material: metal
Body dimensions: 12.4x35x35mm
IP rating: IP67
Max. operating current: 0.1A
кількість в упаковці: 1 шт
товар відсутній
| FHDM 12N5001/S35A |
|
Виробник: BAUMER
Category: Standard Photoelectric Sensors
Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON
Operating temperature: -25...65°C
Operation mode: diffuse-reflective
Range: 15...300mm
Operation modes: DARK-ON; LIGHT-ON
Output configuration: NPN
Connection: connector M8
Sensors features: background impact elimination; sensitivity adjustable
Response time: <1ms
Type of sensor: photoelectric
Supply voltage: 10...30V DC
Number of pins: 4
Body material: metal
Body dimensions: 12.4x35x35mm
IP rating: IP67
Max. operating current: 0.1A
Category: Standard Photoelectric Sensors
Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON
Operating temperature: -25...65°C
Operation mode: diffuse-reflective
Range: 15...300mm
Operation modes: DARK-ON; LIGHT-ON
Output configuration: NPN
Connection: connector M8
Sensors features: background impact elimination; sensitivity adjustable
Response time: <1ms
Type of sensor: photoelectric
Supply voltage: 10...30V DC
Number of pins: 4
Body material: metal
Body dimensions: 12.4x35x35mm
IP rating: IP67
Max. operating current: 0.1A
товар відсутній
| FHDM 12N5001/S35A |
|
Виробник: BAUMER
Category: Standard Photoelectric Sensors
Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON
Operating temperature: -25...65°C
Operation mode: diffuse-reflective
Range: 15...300mm
Operation modes: DARK-ON; LIGHT-ON
Output configuration: NPN
Connection: connector M8
Sensors features: background impact elimination; sensitivity adjustable
Response time: <1ms
Type of sensor: photoelectric
Supply voltage: 10...30V DC
Number of pins: 4
Body material: metal
Body dimensions: 12.4x35x35mm
IP rating: IP67
Max. operating current: 0.1A
кількість в упаковці: 1 шт
Category: Standard Photoelectric Sensors
Description: Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON
Operating temperature: -25...65°C
Operation mode: diffuse-reflective
Range: 15...300mm
Operation modes: DARK-ON; LIGHT-ON
Output configuration: NPN
Connection: connector M8
Sensors features: background impact elimination; sensitivity adjustable
Response time: <1ms
Type of sensor: photoelectric
Supply voltage: 10...30V DC
Number of pins: 4
Body material: metal
Body dimensions: 12.4x35x35mm
IP rating: IP67
Max. operating current: 0.1A
кількість в упаковці: 1 шт
товар відсутній
| IXFA12N50P |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
товар відсутній
| IXFA12N50P TRL |
|
Виробник: Littelfuse
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
| IXFP12N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFP12N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXTA12N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
| IXTA12N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
товар відсутній
| MOCB-12-N-50A |
|
Виробник: OPTIFUSE
Category: Other Car Fuses
Description: Fuse: fuse; 50A; 12VDC; automotive; 31.8x20.51x15.49mm
Manufacturer series: Automotive Type II
Current rating: 50A
Fuse size: 31.8x20.51x15.49mm
Kind of fuse: automotive
Rated voltage: 12V DC
Type of fuse: fuse
кількість в упаковці: 100 шт
Category: Other Car Fuses
Description: Fuse: fuse; 50A; 12VDC; automotive; 31.8x20.51x15.49mm
Manufacturer series: Automotive Type II
Current rating: 50A
Fuse size: 31.8x20.51x15.49mm
Kind of fuse: automotive
Rated voltage: 12V DC
Type of fuse: fuse
кількість в упаковці: 100 шт
товар відсутній
| NB12N50683KBB |
|
Виробник: KYOCERA AVX
NTC (Negative Temperature Coefficient) Thermistors
NTC (Negative Temperature Coefficient) Thermistors
товар відсутній
| NB12N50683KBB |
|
Виробник: Kyocera AVX Components
Thermistor NTC 68K Ohm 10% 2-Pin 0805 Surface Mount Solder Pad 4160K -5 to -4.5 T/R
Thermistor NTC 68K Ohm 10% 2-Pin 0805 Surface Mount Solder Pad 4160K -5 to -4.5 T/R
товар відсутній
| NTB12N50 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK Rail
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK Rail
товар відсутній
| R3112N501A-TR-FE |
|
Виробник: Nisshinbo Micro Devices Inc.
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Voltage - Threshold: 5V
Supplier Device Package: SOT-23-5
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Voltage - Threshold: 5V
Supplier Device Package: SOT-23-5
DigiKey Programmable: Not Verified
товар відсутній
| R3112N501A-TR-FE |
|
Виробник: Nisshinbo
Supervisory Circuits Low Voltage Detector with output delay (output capacitor type)
Supervisory Circuits Low Voltage Detector with output delay (output capacitor type)
товар відсутній
| R3112N501C-TR-FE |
|
Виробник: Nisshinbo
Supervisory Circuits Low Voltage Detector with output delay (output capacitor type)
Supervisory Circuits Low Voltage Detector with output delay (output capacitor type)
товар відсутній
| SIHA12N50E-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 21A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 21A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHA12N50E-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 21A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 21A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIHA12N50E-GE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Description: N-CHANNEL 500V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
товар відсутній