Результат пошуку "1n4150" : > 180
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
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1N4150TR | ON Semiconductor |
 Rectifier Diode Small Signal Switching 50V 0.4A 6ns 2-Pin DO-35 T/R |
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1N4150TR | Vishay |
Rectifier Diode Small Signal Switching Si 50V 0.3A 4ns Automotive 2-Pin DO-35 T/R |
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1N4150TR | onsemi |
Description: DIODE GEN PURP 50V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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1N4150TR_S00Z | onsemi |
Description: DIODE GEN PURP 50V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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1N4150UBCA | Microchip Technology |
Description: DIODE ARRAY GP 50V 200MA UBC Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: UBC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA |
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| 1N4150UBCA | Microchip Technology |
Diodes - General Purpose, Power, Switching 75 V Signal or Computer Diode |
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| 1N4150UBCA/TR | Microchip Technology | Diodes - General Purpose, Power, Switching Signal or Computer Diode |
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1N4150UBD | Microchip Technology |
Description: DIODE ARRAY GP 50V 200MA UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA |
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| 1N4150UBD | Microchip Technology |
Zener Diodes 75 V Signal or Computer Diode |
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1N4150UBD/TR | Microchip Technology |
Description: DIODE ARRAY GP 50V 200MA UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA |
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| 1N4150UBD/TR | Microchip Technology | Zener Diodes Signal or Computer Diode |
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1N4150UR-1 | Microchip Technology |
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag |
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1N4150UR-1 | Microchip Technology |
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag |
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1N4150UR-1 | Microchip Technology |
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag |
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1N4150UR-1/TR | Microchip Technology |
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA T/R |
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1N4150UR-1/TR | Microchip Technology |
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA T/R |
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| 1N4150UR-1/TR | Microchip Technology |
Description: DIODE GEN PURP 50V 200MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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1N4150UR-1JANTXV | Microchip Technology |
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag |
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1N4150W-E3-08 | Vishay |
Diode Small Signal Switching Si 50V 0.3A 2-Pin SOD-123 T/R |
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1N4150W-E3-08 | Vishay |
Rectifier Diode Small Signal Switching Si 50V 0.2A 4ns 2-Pin SOD-123 T/R |
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1N4150W-E3-18 | Vishay |
Rectifier Diode Small Signal Switching Si 50V 0.2A 4ns 2-Pin SOD-123 T/R |
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1N4150W-E3-18 | Vishay |
Diode Small Signal Switching Si 50V 0.3A 2-Pin SOD-123 T/R |
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1N4150W-G3-08 | Vishay |
Diode Small Signal Switching 50V 0.3A 2-Pin SOD-123 T/R |
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1N4150W-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 200MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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1N4150W-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 200MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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1N4150W-G3-18 | Vishay |
Diode Small Signal Switching 50V 0.3A 2-Pin SOD-123 T/R |
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1N4150W-HE3-08 | Vishay |
Rectifier Diode Small Signal Switching Si 50V 0.2A 4ns Automotive 2-Pin SOD-123 T/R |
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1N4150W-HE3-18 | Vishay |
Diode Small Signal Switching Si 50V 0.2A Automotive AEC-Q101 2-Pin SOD-123 T/R |
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1N4150W-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 200MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
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1N4150W-HE3-18 | Vishay |
Diode Small Signal Switching Si 50V 0.2A Automotive 2-Pin SOD-123 T/R |
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1N4150W-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 200MA SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
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| 1N4150W-HE3-A-18 | Vishay | Diodes - General Purpose, Power, Switching SWITCHING DIODE SOD123 |
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1N4150W-HE3_A-08 | Vishay |
Description: SWITCHING DIODE GENPURP SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
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1N4150W-HE3_A-08 | Vishay |
Description: SWITCHING DIODE GENPURP SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
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1N4150W-HE3_A-18 | Vishay |
Description: SWITCHING DIODE GENPURP SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
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1N4150W-HE3_A-18 | Vishay |
Description: SWITCHING DIODE GENPURP SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
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1N4150W-HE3_A-18 | Vishay Semiconductors |
Diodes - General Purpose, Power, Switching SWITCHING DIODE GENPURP SOD123 |
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1N4150W-V-GS08 | Vishay |
Diode Small Signal Switching Si 50V 0.2A Automotive AEC-Q101 2-Pin SOD-123 T/R |
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1N4150_AX_10001 | Panjit |
Diodes - General Purpose, Power, Switching /1N4150/TB/26mm/RoHS/5K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ/// |
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1N4150_AY_10001 | Panjit |
Diodes - General Purpose, Power, Switching /1N4150/TB/52mm/RoHS/5K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ/// |
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1N4150_B0_10001 | Panjit |
Diodes - General Purpose, Power, Switching 1N4150/BP//RoHS/2K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ/// |
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| 1N4150_Q | onsemi / Fairchild |
Diodes - General Purpose, Power, Switching High Conductance Ultra Fast |
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1N4150_R2_10001 | Panjit |
Diodes - General Purpose, Power, Switching /1N4150/TR/15"/RoHS/10K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ/// |
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1N4150_S62Z | onsemi |
Description: DIODE GEN PURP 50V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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1N4150_T26A | onsemi |
Description: DIODE GEN PURP 50V 200MA DO35 Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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1N4150_T50A | onsemi |
Description: DIODE GEN PURP 50V 200MA DO35 Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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1N4150_T50R | onsemi |
Description: DIODE GEN PURP 50V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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| 1N4150UR-1 | MICROSEMI |
DO213AA/SIGNAL OR COMPUTER DIODE 1N4150 кількість в упаковці: 1 шт |
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| CPD93V-1N4150-WN | Central Semiconductor Corp |
Description: DIODE GEN PURP 50V 200MA DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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JAN1N4150-1 | Microchip Technology |
Rectifier Diode Switching 50V 4ns 2-Pin DO-35 Bag |
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JAN1N4150-1 | Microchip Technology |
Description: DIODE GEN PURP 50V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Military Qualification: MIL-PRF-19500/231 |
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JAN1N4150-1/TR | Microchip Technology |
Description: DIODE GEN PURP 50V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Military Qualification: MIL-PRF-19500/231 |
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JAN1N4150-1/TR | Microchip / Microsemi |
Diodes - General Purpose, Power, Switching 75 V Signal or Computer Diode |
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| JAN1N4150UR-1 | Microchip Technology |
Description: DIODE GEN PURP 50V 200MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Military Qualification: MIL-PRF-19500/231 |
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JAN1N4150UR-1 | Microchip Technology |
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag |
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| 1N4150TR |
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Виробник: ON Semiconductor
Rectifier Diode Small Signal Switching 50V 0.4A 6ns 2-Pin DO-35 T/R
Rectifier Diode Small Signal Switching 50V 0.4A 6ns 2-Pin DO-35 T/R
товар відсутній
| 1N4150TR |
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Виробник: Vishay
Rectifier Diode Small Signal Switching Si 50V 0.3A 4ns Automotive 2-Pin DO-35 T/R
Rectifier Diode Small Signal Switching Si 50V 0.3A 4ns Automotive 2-Pin DO-35 T/R
товар відсутній
| 1N4150TR |
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Виробник: onsemi
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
| 1N4150TR_S00Z |
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Виробник: onsemi
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
| 1N4150UBCA |
|
Виробник: Microchip Technology
Description: DIODE ARRAY GP 50V 200MA UBC
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UBC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Description: DIODE ARRAY GP 50V 200MA UBC
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UBC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
товар відсутній
| 1N4150UBCA |
|
Виробник: Microchip Technology
Diodes - General Purpose, Power, Switching 75 V Signal or Computer Diode
Diodes - General Purpose, Power, Switching 75 V Signal or Computer Diode
товар відсутній
| 1N4150UBCA/TR |
Виробник: Microchip Technology
Diodes - General Purpose, Power, Switching Signal or Computer Diode
Diodes - General Purpose, Power, Switching Signal or Computer Diode
товар відсутній
| 1N4150UBD |
|
Виробник: Microchip Technology
Description: DIODE ARRAY GP 50V 200MA UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Description: DIODE ARRAY GP 50V 200MA UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
товар відсутній
| 1N4150UBD/TR |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 50V 200MA UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Description: DIODE ARRAY GP 50V 200MA UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
товар відсутній
| 1N4150UR-1 |
|
Виробник: Microchip Technology
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag
товар відсутній
| 1N4150UR-1 |
|
Виробник: Microchip Technology
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag
товар відсутній
| 1N4150UR-1 |
|
Виробник: Microchip Technology
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag
товар відсутній
| 1N4150UR-1/TR |
|
Виробник: Microchip Technology
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA T/R
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA T/R
товар відсутній
| 1N4150UR-1/TR |
|
Виробник: Microchip Technology
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA T/R
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA T/R
товар відсутній
| 1N4150UR-1/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
| 1N4150UR-1JANTXV |
|
Виробник: Microchip Technology
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag
товар відсутній
| 1N4150W-E3-08 |
|
Виробник: Vishay
Diode Small Signal Switching Si 50V 0.3A 2-Pin SOD-123 T/R
Diode Small Signal Switching Si 50V 0.3A 2-Pin SOD-123 T/R
товар відсутній
| 1N4150W-E3-08 |
|
Виробник: Vishay
Rectifier Diode Small Signal Switching Si 50V 0.2A 4ns 2-Pin SOD-123 T/R
Rectifier Diode Small Signal Switching Si 50V 0.2A 4ns 2-Pin SOD-123 T/R
товар відсутній
| 1N4150W-E3-18 |
|
Виробник: Vishay
Rectifier Diode Small Signal Switching Si 50V 0.2A 4ns 2-Pin SOD-123 T/R
Rectifier Diode Small Signal Switching Si 50V 0.2A 4ns 2-Pin SOD-123 T/R
товар відсутній
| 1N4150W-E3-18 |
|
Виробник: Vishay
Diode Small Signal Switching Si 50V 0.3A 2-Pin SOD-123 T/R
Diode Small Signal Switching Si 50V 0.3A 2-Pin SOD-123 T/R
товар відсутній
| 1N4150W-G3-08 |
|
Виробник: Vishay
Diode Small Signal Switching 50V 0.3A 2-Pin SOD-123 T/R
Diode Small Signal Switching 50V 0.3A 2-Pin SOD-123 T/R
товар відсутній
| 1N4150W-G3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
| 1N4150W-G3-18 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
| 1N4150W-G3-18 |
|
Виробник: Vishay
Diode Small Signal Switching 50V 0.3A 2-Pin SOD-123 T/R
Diode Small Signal Switching 50V 0.3A 2-Pin SOD-123 T/R
товар відсутній
| 1N4150W-HE3-08 |
|
Виробник: Vishay
Rectifier Diode Small Signal Switching Si 50V 0.2A 4ns Automotive 2-Pin SOD-123 T/R
Rectifier Diode Small Signal Switching Si 50V 0.2A 4ns Automotive 2-Pin SOD-123 T/R
товар відсутній
| 1N4150W-HE3-18 |
|
Виробник: Vishay
Diode Small Signal Switching Si 50V 0.2A Automotive AEC-Q101 2-Pin SOD-123 T/R
Diode Small Signal Switching Si 50V 0.2A Automotive AEC-Q101 2-Pin SOD-123 T/R
товар відсутній
| 1N4150W-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| 1N4150W-HE3-18 |
|
Виробник: Vishay
Diode Small Signal Switching Si 50V 0.2A Automotive 2-Pin SOD-123 T/R
Diode Small Signal Switching Si 50V 0.2A Automotive 2-Pin SOD-123 T/R
товар відсутній
| 1N4150W-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
товар відсутній
| 1N4150W-HE3-A-18 |
Виробник: Vishay
Diodes - General Purpose, Power, Switching SWITCHING DIODE SOD123
Diodes - General Purpose, Power, Switching SWITCHING DIODE SOD123
товар відсутній
| 1N4150W-HE3_A-08 |
|
Виробник: Vishay
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
товар відсутній
| 1N4150W-HE3_A-08 |
|
Виробник: Vishay
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
товар відсутній
| 1N4150W-HE3_A-18 |
|
Виробник: Vishay
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
товар відсутній
| 1N4150W-HE3_A-18 |
|
Виробник: Vishay
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
товар відсутній
| 1N4150W-HE3_A-18 |
|
Виробник: Vishay Semiconductors
Diodes - General Purpose, Power, Switching SWITCHING DIODE GENPURP SOD123
Diodes - General Purpose, Power, Switching SWITCHING DIODE GENPURP SOD123
товар відсутній
| 1N4150W-V-GS08 |
|
Виробник: Vishay
Diode Small Signal Switching Si 50V 0.2A Automotive AEC-Q101 2-Pin SOD-123 T/R
Diode Small Signal Switching Si 50V 0.2A Automotive AEC-Q101 2-Pin SOD-123 T/R
товар відсутній
| 1N4150_AX_10001 |
|
Виробник: Panjit
Diodes - General Purpose, Power, Switching /1N4150/TB/26mm/RoHS/5K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ///
Diodes - General Purpose, Power, Switching /1N4150/TB/26mm/RoHS/5K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ///
товар відсутній
| 1N4150_AY_10001 |
|
Виробник: Panjit
Diodes - General Purpose, Power, Switching /1N4150/TB/52mm/RoHS/5K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ///
Diodes - General Purpose, Power, Switching /1N4150/TB/52mm/RoHS/5K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ///
товар відсутній
| 1N4150_B0_10001 |
|
Виробник: Panjit
Diodes - General Purpose, Power, Switching 1N4150/BP//RoHS/2K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ///
Diodes - General Purpose, Power, Switching 1N4150/BP//RoHS/2K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ///
товар відсутній
| 1N4150_Q |
|
Виробник: onsemi / Fairchild
Diodes - General Purpose, Power, Switching High Conductance Ultra Fast
Diodes - General Purpose, Power, Switching High Conductance Ultra Fast
товар відсутній
| 1N4150_R2_10001 |
|
Виробник: Panjit
Diodes - General Purpose, Power, Switching /1N4150/TR/15"/RoHS/10K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ///
Diodes - General Purpose, Power, Switching /1N4150/TR/15"/RoHS/10K/DO-35/SWI/AXIAL/UF-05/SY0307047/PJ///
товар відсутній
| 1N4150_S62Z |
|
Виробник: onsemi
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
| 1N4150_T26A |
|
Виробник: onsemi
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
| 1N4150_T50A |
|
Виробник: onsemi
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
| 1N4150_T50R |
|
Виробник: onsemi
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
| 1N4150UR-1 |
|
товар відсутній
| CPD93V-1N4150-WN |
|
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
| JAN1N4150-1 |
|
Виробник: Microchip Technology
Rectifier Diode Switching 50V 4ns 2-Pin DO-35 Bag
Rectifier Diode Switching 50V 4ns 2-Pin DO-35 Bag
товар відсутній
| JAN1N4150-1 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
товар відсутній
| JAN1N4150-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
товар відсутній
| JAN1N4150-1/TR |
|
Виробник: Microchip / Microsemi
Diodes - General Purpose, Power, Switching 75 V Signal or Computer Diode
Diodes - General Purpose, Power, Switching 75 V Signal or Computer Diode
товар відсутній
| JAN1N4150UR-1 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
товар відсутній
| JAN1N4150UR-1 |
|
Виробник: Microchip Technology
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag
Rectifier Diode Switching 75V 0.4A 4ns 2-Pin DO-213AA Bag
товар відсутній