Результат пошуку "25n120" : > 120

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SGL25N120RUFD
на замовлення 10000 шт:
термін постачання 14-28 дні (днів)
SKW25N120FKSA1 Infineon SKW25N120_Rev2_2G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427fc7f3d32
на замовлення 120 шт:
термін постачання 14-28 дні (днів)
TD25N1200
на замовлення 30 шт:
термін постачання 14-28 дні (днів)
TD25N1200KOC AEG 05+
на замовлення 400 шт:
термін постачання 14-28 дні (днів)
TD25N1200KOF AEG
на замовлення 100 шт:
термін постачання 14-28 дні (днів)
TT25N1200KOC AEG
на замовлення 100 шт:
термін постачання 14-28 дні (днів)
FQA25N120D (транзистор)
Код товару: 76065 		Транзистори > Польові N-канальні
товар відсутній
IGW25N120H3
Код товару: 160434 		Транзистори > IGBT
товар відсутній
IKW25N120H3 IKW25N120H3
Код товару: 113551 		Транзистори > IGBT
товар відсутній
IKW25N120T2 IKW25N120T2
Код товару: 39789 		Транзистори > IGBT
товар відсутній
KGT25N120NDA
Код товару: 178327 		Транзистори > IGBT
товар відсутній
SGW25N120 SGW25N120
Код товару: 37466 		Infineon SGW25N120_Rev2_5G.pdf Транзистори > IGBT
Корпус: TO-247
Vces: 1200 V
Vce: 3,1 V
Ic 25: 46 A
Ic 100: 25 A
Pd 25: 313 W
td(on)/td(off) 100-150 град: 45/730
товар відсутній
SKW25N120
Код товару: 26558 		Транзистори > IGBT
товар відсутній
711AB125N1206AUD40 Glenair Circular MIL Spec Tools, Hardware & Accessories ACCESSORIES - GTK CONDUIT FITTING
товар відсутній
FGA25N120ANDTU FGA25N120ANDTU onsemi FGA25N120AND.pdf Description: IGBT 1200V 40A 310W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
товар відсутній
FGA25N120ANTDTU FGA25N120ANTDTU ON Semiconductor fga25n120antdtu-d.pdf Trans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail
товар відсутній
FGA25N120ANTDTU FGA25N120ANTDTU onsemi fga25n120antdtu-d.pdf Description: IGBT NPT/TRENCH 1200V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 4.1mJ (on), 960µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
товар відсутній
FGA25N120ANTDTU-F109 FGA25N120ANTDTU-F109 onsemi fga25n120antdtu-d.pdf Description: IGBT 1200V 50A 312W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 4.1mJ (on), 960µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
товар відсутній
FGA25N120ANTDTU-F109 FGA25N120ANTDTU-F109 ON Semiconductor fga25n120antdtu-d.pdf Trans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3P Tube
товар відсутній
FGA25N120ANTU FGA25N120ANTU onsemi FGA25N120AN.pdf Description: IGBT 1200V 40A 310W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
товар відсутній
FGA25N120FTD FGA25N120FTD onsemi FGA25N120FTD.pdf Description: IGBT 1200V 50A 313W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 770 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/210ns
Switching Energy: 340µJ (on), 900µJ (off)
Test Condition: 600V, 25A, 15Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
товар відсутній
FGA25N120FTD FGA25N120FTD ON Semiconductor 98fga25n120ftd.pdf Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail
товар відсутній
FGA25N120FTD FGA25N120FTD ON Semiconductor 98fga25n120ftd.pdf Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail
товар відсутній
FGH25N120FTDS FGH25N120FTDS ON Semiconductor fgh25n120ftds-d.pdf Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH25N120FTDS FGH25N120FTDS ON Semiconductor fgh25n120ftds-d.pdf Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH25N120FTDS FGH25N120FTDS onsemi fgh25n120ftds-d.pdf Description: IGBT 1200V 50A 313W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 535 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/151ns
Switching Energy: 1.42mJ (on), 1.16mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 169 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
товар відсутній
IGW25N120H3FKSA1 IGW25N120H3FKSA1 Infineon Technologies infineon-igw25n120h3-datasheet-v02_01-en.pdf Trans IGBT Chip N-CH 1200V 50A 326000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IGW25N120H3XK IGW25N120H3XK Infineon Technologies Infineon-IGW25N120H3-DataSheet-v02_01-EN-1226056.pdf IGBT Transistors IGBT PRODUCTS
товар відсутній
IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES IHW25N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-off time: 2004ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES IHW25N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-off time: 2004ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 1 шт
товар відсутній
IHW25N120E1XKSA1 IHW25N120E1XKSA1 Infineon Technologies 9infineon-ihw25n120e1-ds-v02_01-en.pdffileid5546d4625696ed760156a2.pdf Trans IGBT Chip N-CH 1200V 50A 231000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IHW25N120R2FKSA1 IHW25N120R2FKSA1 Infineon Technologies IHW25N120R2.pdf Description: IGBT 1200V 50A 365W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: -/324ns
Switching Energy: 1.59mJ
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 60.7 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 365 W
товар відсутній
IHW25N120R2FKSA1 IHW25N120R2FKSA1 Infineon Technologies infineon-ihw25n120r2-datasheet-v02_03-en.pdf Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IKW25N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 75A
Turn-on time: 38ns
Turn-off time: 490ns
Type of transistor: IGBT
Power dissipation: 125W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 150nC
Technology: TRENCHSTOP™
Mounting: THT
Case: TO247-3
товар відсутній
IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES IKW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Type of transistor: IGBT
Power dissipation: 326W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 115nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 7-14 дні (днів)
1+608.05 грн
3+ 450.1 грн
7+ 409.35 грн
IKW25N120T2FKSA1 IKW25N120T2FKSA1 Infineon Technologies infineon-ikw25n120t2-datasheet-v02_02-en.pdf Trans IGBT Chip N-CH 1200V 50A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IRG8P25N120KD-EPBF IRG8P25N120KD-EPBF Infineon Technologies IRG8P25N120KD%28-E%29PbF.pdf Description: IGBT 1200V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
товар відсутній
IRG8P25N120KDPBF IRG8P25N120KDPBF Infineon Technologies irg8p25n120kdpbf.pdf Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube
товар відсутній
IRG8P25N120KDPBF IRG8P25N120KDPBF Infineon Technologies IRG8P25N120KD%28-E%29PbF.pdf Description: IGBT 1200V 40A 180W TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
товар відсутній
IXEH25N120 IXEH25N120 IXYS IXEH25N120_D1.pdf Description: IGBT 1200V 36A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 4.1mJ (on), 1.5mJ (off)
Test Condition: 600V, 20A, 68Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
товар відсутній
IXEH25N120D1 IXEH25N120D1 IXYS IXEH25N120_D1.pdf Description: IGBT 1200V 36A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 4.1mJ (on), 1.5mJ (off)
Test Condition: 600V, 20A, 68Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
товар відсутній
IXGH25N120 IXGH25N120 IXYS ixys_92783-1547306.pdf IGBT Transistors 50 Amps 1200V 3 Rds
товар відсутній
IXGH25N120 IXGH25N120 IXYS 92783.pdf Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N120A IXGH25N120A IXYS 92783.pdf Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N120A IXGH25N120A IXYS ixys_92783-1547306.pdf IGBT Transistors 25 Amps 1200V
товар відсутній
IXSH25N120A IXSH25N120A IXYS 95593.pdf Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXSH25N120AU1 IXSH25N120AU1 IXYS 94521.pdf Description: IGBT 1200V 50A 200W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
MIW25N120FA Micro Commercial Components miw25n120fato-247ab.pdf MIW25N120FA
товар відсутній
MIW25N120FA-BP Micro Commercial Components miw25n120fato-247ab.pdf MIW25N120FA-BP
товар відсутній
NGTB25N120FL2WAG NGTB25N120FL2WAG ON Semiconductor ngtb25n120fl2wa-d.pdf Trans IGBT Chip N-CH 1200V 100A 385000mW 4-Pin(4+Tab) TO-247 Tube
товар відсутній
NGTB25N120FL2WAG NGTB25N120FL2WAG onsemi ngtb25n120fl2wa-d.pdf Description: IGBT FIELD STOP 1.2KV TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 17ns/113ns
Switching Energy: 990µJ (on), 660µJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 181 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
товар відсутній
NGTB25N120FL2WG NGTB25N120FL2WG ONSEMI NGTB25N120FL2WG.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 192W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
товар відсутній
NGTB25N120FL2WG NGTB25N120FL2WG ONSEMI NGTB25N120FL2WG.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 192W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
NGTB25N120FL2WG NGTB25N120FL2WG ON Semiconductor ngtb25n120fl2w-d.pdf Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
NGTB25N120FL3WG NGTB25N120FL3WG ON Semiconductor ngtb25n120fl3w-d.pdf Trans IGBT Chip N-CH 1200V 100A 349000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
NGTB25N120FLWG NGTB25N120FLWG onsemi ngtb25n120flw-d.pdf Description: IGBT 1200V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 91ns/228ns
Switching Energy: 1.5mJ (on), 950µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
товар відсутній
NGTB25N120FLWG NGTB25N120FLWG ON Semiconductor ngtb25n120flw-d.pdf Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
NGTB25N120IHLWG NGTB25N120IHLWG onsemi ngtb25n120ihlw-d.pdf Description: IGBT 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: -/235ns
Switching Energy: 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
товар відсутній
NGTB25N120IHLWG NGTB25N120IHLWG ON Semiconductor ngtb25n120ihlw-d.pdf Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
NGTB25N120LWG NGTB25N120LWG onsemi NGTB25N120LWG.pdf Description: IGBT 1200V 50A 192W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 89ns/235ns
Switching Energy: 3.4mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
товар відсутній
SGL25N120RUFD
на замовлення 10000 шт:
термін постачання 14-28 дні (днів)
SKW25N120FKSA1 SKW25N120_Rev2_2G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427fc7f3d32
Виробник: Infineon
на замовлення 120 шт:
термін постачання 14-28 дні (днів)
TD25N1200
на замовлення 30 шт:
термін постачання 14-28 дні (днів)
TD25N1200KOC
Виробник: AEG
05+
на замовлення 400 шт:
термін постачання 14-28 дні (днів)
TD25N1200KOF
Виробник: AEG
на замовлення 100 шт:
термін постачання 14-28 дні (днів)
TT25N1200KOC
Виробник: AEG
на замовлення 100 шт:
термін постачання 14-28 дні (днів)
FQA25N120D (транзистор)
Код товару: 76065
Транзистори > Польові N-канальні
товар відсутній
IGW25N120H3
Код товару: 160434
Транзистори > IGBT
товар відсутній
IKW25N120H3
Код товару: 113551
IKW25N120H3
Транзистори > IGBT
товар відсутній
IKW25N120T2
Код товару: 39789
IKW25N120T2
Транзистори > IGBT
товар відсутній
KGT25N120NDA
Код товару: 178327
Транзистори > IGBT
товар відсутній
SGW25N120
Код товару: 37466		 SGW25N120_Rev2_5G.pdf
SGW25N120
Виробник: Infineon
Транзистори > IGBT
Корпус: TO-247
Vces: 1200 V
Vce: 3,1 V
Ic 25: 46 A
Ic 100: 25 A
Pd 25: 313 W
td(on)/td(off) 100-150 град: 45/730
товар відсутній
SKW25N120
Код товару: 26558
Транзистори > IGBT
товар відсутній
711AB125N1206AUD40
Виробник: Glenair
Circular MIL Spec Tools, Hardware & Accessories ACCESSORIES - GTK CONDUIT FITTING
товар відсутній
FGA25N120ANDTU FGA25N120AND.pdf
FGA25N120ANDTU
Виробник: onsemi
Description: IGBT 1200V 40A 310W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
товар відсутній
FGA25N120ANTDTU fga25n120antdtu-d.pdf
FGA25N120ANTDTU
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail
товар відсутній
FGA25N120ANTDTU fga25n120antdtu-d.pdf
FGA25N120ANTDTU
Виробник: onsemi
Description: IGBT NPT/TRENCH 1200V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 4.1mJ (on), 960µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
товар відсутній
FGA25N120ANTDTU-F109 fga25n120antdtu-d.pdf
FGA25N120ANTDTU-F109
Виробник: onsemi
Description: IGBT 1200V 50A 312W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 4.1mJ (on), 960µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
товар відсутній
FGA25N120ANTDTU-F109 fga25n120antdtu-d.pdf
FGA25N120ANTDTU-F109
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3P Tube
товар відсутній
FGA25N120ANTU FGA25N120AN.pdf
FGA25N120ANTU
Виробник: onsemi
Description: IGBT 1200V 40A 310W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
товар відсутній
FGA25N120FTD FGA25N120FTD.pdf
FGA25N120FTD
Виробник: onsemi
Description: IGBT 1200V 50A 313W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 770 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/210ns
Switching Energy: 340µJ (on), 900µJ (off)
Test Condition: 600V, 25A, 15Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
товар відсутній
FGA25N120FTD 98fga25n120ftd.pdf
FGA25N120FTD
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail
товар відсутній
FGA25N120FTD 98fga25n120ftd.pdf
FGA25N120FTD
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail
товар відсутній
FGH25N120FTDS fgh25n120ftds-d.pdf
FGH25N120FTDS
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH25N120FTDS fgh25n120ftds-d.pdf
FGH25N120FTDS
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH25N120FTDS fgh25n120ftds-d.pdf
FGH25N120FTDS
Виробник: onsemi
Description: IGBT 1200V 50A 313W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 535 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/151ns
Switching Energy: 1.42mJ (on), 1.16mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 169 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
товар відсутній
IGW25N120H3FKSA1 infineon-igw25n120h3-datasheet-v02_01-en.pdf
IGW25N120H3FKSA1
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 50A 326000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IGW25N120H3XK Infineon-IGW25N120H3-DataSheet-v02_01-EN-1226056.pdf
IGW25N120H3XK
Виробник: Infineon Technologies
IGBT Transistors IGBT PRODUCTS
товар відсутній
IHW25N120E1XKSA1 IHW25N120E1.pdf
IHW25N120E1XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-off time: 2004ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
IHW25N120E1XKSA1 IHW25N120E1.pdf
IHW25N120E1XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-off time: 2004ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 1 шт
товар відсутній
IHW25N120E1XKSA1 9infineon-ihw25n120e1-ds-v02_01-en.pdffileid5546d4625696ed760156a2.pdf
IHW25N120E1XKSA1
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 50A 231000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IHW25N120R2FKSA1 IHW25N120R2.pdf
IHW25N120R2FKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 50A 365W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: -/324ns
Switching Energy: 1.59mJ
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 60.7 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 365 W
товар відсутній
IHW25N120R2FKSA1 infineon-ihw25n120r2-datasheet-v02_03-en.pdf
IHW25N120R2FKSA1
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IKW25N120CS7XKSA1 Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 75A
Turn-on time: 38ns
Turn-off time: 490ns
Type of transistor: IGBT
Power dissipation: 125W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 150nC
Technology: TRENCHSTOP™
Mounting: THT
Case: TO247-3
товар відсутній
IKW25N120H3FKSA1 IKW25N120H3-DTE.pdf
IKW25N120H3FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Type of transistor: IGBT
Power dissipation: 326W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 115nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+608.05 грн
3+ 450.1 грн
7+ 409.35 грн
IKW25N120T2FKSA1 infineon-ikw25n120t2-datasheet-v02_02-en.pdf
IKW25N120T2FKSA1
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 50A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IRG8P25N120KD-EPBF IRG8P25N120KD%28-E%29PbF.pdf
IRG8P25N120KD-EPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
товар відсутній
IRG8P25N120KDPBF irg8p25n120kdpbf.pdf
IRG8P25N120KDPBF
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube
товар відсутній
IRG8P25N120KDPBF IRG8P25N120KD%28-E%29PbF.pdf
IRG8P25N120KDPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 40A 180W TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
товар відсутній
IXEH25N120 IXEH25N120_D1.pdf
IXEH25N120
Виробник: IXYS
Description: IGBT 1200V 36A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 4.1mJ (on), 1.5mJ (off)
Test Condition: 600V, 20A, 68Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
товар відсутній
IXEH25N120D1 IXEH25N120_D1.pdf
IXEH25N120D1
Виробник: IXYS
Description: IGBT 1200V 36A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 4.1mJ (on), 1.5mJ (off)
Test Condition: 600V, 20A, 68Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
товар відсутній
IXGH25N120 ixys_92783-1547306.pdf
IXGH25N120
Виробник: IXYS
IGBT Transistors 50 Amps 1200V 3 Rds
товар відсутній
IXGH25N120 92783.pdf
IXGH25N120
Виробник: IXYS
Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N120A 92783.pdf
IXGH25N120A
Виробник: IXYS
Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N120A ixys_92783-1547306.pdf
IXGH25N120A
Виробник: IXYS
IGBT Transistors 25 Amps 1200V
товар відсутній
IXSH25N120A 95593.pdf
IXSH25N120A
Виробник: IXYS
Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXSH25N120AU1 94521.pdf
IXSH25N120AU1
Виробник: IXYS
Description: IGBT 1200V 50A 200W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
MIW25N120FA miw25n120fato-247ab.pdf
Виробник: Micro Commercial Components
MIW25N120FA
товар відсутній
MIW25N120FA-BP miw25n120fato-247ab.pdf
Виробник: Micro Commercial Components
MIW25N120FA-BP
товар відсутній
NGTB25N120FL2WAG ngtb25n120fl2wa-d.pdf
NGTB25N120FL2WAG
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 100A 385000mW 4-Pin(4+Tab) TO-247 Tube
товар відсутній
NGTB25N120FL2WAG ngtb25n120fl2wa-d.pdf
NGTB25N120FL2WAG
Виробник: onsemi
Description: IGBT FIELD STOP 1.2KV TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 17ns/113ns
Switching Energy: 990µJ (on), 660µJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 181 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
товар відсутній
NGTB25N120FL2WG NGTB25N120FL2WG.pdf
NGTB25N120FL2WG
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 192W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
товар відсутній
NGTB25N120FL2WG NGTB25N120FL2WG.pdf
NGTB25N120FL2WG
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 192W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
NGTB25N120FL2WG ngtb25n120fl2w-d.pdf
NGTB25N120FL2WG
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
NGTB25N120FL3WG ngtb25n120fl3w-d.pdf
NGTB25N120FL3WG
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 100A 349000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
NGTB25N120FLWG ngtb25n120flw-d.pdf
NGTB25N120FLWG
Виробник: onsemi
Description: IGBT 1200V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 91ns/228ns
Switching Energy: 1.5mJ (on), 950µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
товар відсутній
NGTB25N120FLWG ngtb25n120flw-d.pdf
NGTB25N120FLWG
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
NGTB25N120IHLWG ngtb25n120ihlw-d.pdf
NGTB25N120IHLWG
Виробник: onsemi
Description: IGBT 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: -/235ns
Switching Energy: 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
товар відсутній
NGTB25N120IHLWG ngtb25n120ihlw-d.pdf
NGTB25N120IHLWG
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
NGTB25N120LWG NGTB25N120LWG.pdf
NGTB25N120LWG
Виробник: onsemi
Description: IGBT 1200V 50A 192W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 89ns/235ns
Switching Energy: 3.4mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
товар відсутній
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