Результат пошуку "2N90" : > 180
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| S29GL032N90TFI010 | SPANSION |
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на замовлення 1000 шт: термін постачання 14-28 дні (днів) |
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| S29GL032N90TFI020 | SPANSION |
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на замовлення 1000 шт: термін постачання 14-28 дні (днів) |
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| S29GL032N90TFI03 | SPANSION | TSOP48 |
на замовлення 615 шт: термін постачання 14-28 дні (днів) |
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| S29GL032N90TFI030. |
на замовлення 1920 шт: термін постачання 14-28 дні (днів) |
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| S29GL032N90TFI030.. |
на замовлення 1920 шт: термін постачання 14-28 дні (днів) |
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| S29GL032N90TFI04 | SPANSION | TSOP 10+PBF |
на замовлення 2880 шт: термін постачання 14-28 дні (днів) |
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| S29GL032N90TFI04 | SPANSION |
на замовлення 3546 шт: термін постачання 14-28 дні (днів) |
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| S29GL032N90TFI040. |
на замовлення 1920 шт: термін постачання 14-28 дні (днів) |
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| S29GL032N90TFI040.. |
на замовлення 1920 шт: термін постачання 14-28 дні (днів) |
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| S29GL032N90TFI040H | SPANSION | 8 |
на замовлення 260 шт: термін постачання 14-28 дні (днів) |
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| S29GL032N90TFIM3 | SPANSION | 08NOPB |
на замовлення 400 шт: термін постачання 14-28 дні (днів) |
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| S29GL032N90TFIR3 |
на замовлення 32 шт: термін постачання 14-28 дні (днів) |
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| S29GL32N90T |
на замовлення 3100 шт: термін постачання 14-28 дні (днів) |
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| S29GL32N90TFI040 |
на замовлення 3100 шт: термін постачання 14-28 дні (днів) |
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| S29GL512N90FFI010 |
на замовлення 550 шт: термін постачання 14-28 дні (днів) |
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| S29GL512N90TAI010 |
на замовлення 1550 шт: термін постачання 14-28 дні (днів) |
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| S29GL512N90TFI010 |
на замовлення 3200 шт: термін постачання 14-28 дні (днів) |
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| SSI2N90ATU |
на замовлення 4000 шт: термін постачання 14-28 дні (днів) |
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| SSP2N90 |
на замовлення 1672 шт: термін постачання 14-28 дні (днів) |
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| SSP2N90A |
на замовлення 40 шт: термін постачання 14-28 дні (днів) |
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| SSR2N90A |
на замовлення 5800 шт: термін постачання 14-28 дні (днів) |
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| SSS2N90 |
на замовлення 100000 шт: термін постачання 14-28 дні (днів) |
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| SSS2N90A |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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| SSW2N90A |
на замовлення 9800 шт: термін постачання 14-28 дні (днів) |
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| Конденсатор КД-2-Н90-0,022мкФ (85г) |
на замовлення 462 шт: термін постачання 2-3 дні (днів) |
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| Переключатель ПГК 5П2Н (90г) |
на замовлення 4 шт: термін постачання 2-3 дні (днів) |
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FQP2N90 Код товару: 61646 |
Транзистори > Польові N-канальні |
товар відсутній
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S29GL032N90FFI040 Код товару: 133538 |
Мікросхеми > Пам'ять |
товар відсутній
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S29GL032N90TFI04 Код товару: 198307 |
Мікросхеми > Пам'ять |
товар відсутній
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S29GL032N90TFI040 Код товару: 59308 |
Мікросхеми > Пам'ять |
товар відсутній
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| 2N907AE4 | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
товар відсутній |
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AL02BT2N902 | Viking |
Category: SMD 0402 inductors Description: Inductor: thin film; SMD; 0402; 2.9nH; 460mA; 350mΩ; Q: 16; ±0,1nH Operating current: 0.46A Tolerance: ±0,1nH Inductance: 2.9nH Type of inductor: thin film Q factor: 16 Test frequency: 500MHz Resonant frequency: 6GHz Case - mm: 1005 Case - inch: 0402 Mounting: SMD Resistance: 0.35Ω |
товар відсутній |
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AL02BT2N902 | Viking |
Category: SMD 0402 inductors Description: Inductor: thin film; SMD; 0402; 2.9nH; 460mA; 350mΩ; Q: 16; ±0,1nH Operating current: 0.46A Tolerance: ±0,1nH Inductance: 2.9nH Type of inductor: thin film Q factor: 16 Test frequency: 500MHz Resonant frequency: 6GHz Case - mm: 1005 Case - inch: 0402 Mounting: SMD Resistance: 0.35Ω кількість в упаковці: 1000 шт |
товар відсутній |
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ECXV-P35C2N-90.000 | ECS |
VCXO Oscillators 90.000MHz 3.3V 25ppm-40C +85C |
товар відсутній |
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| EXR2N902RTN | TE Connectivity |
Duck,EXR,902-928MHz |
товар відсутній |
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| EXR2N902RTN | TE Connectivity / Laird External Antennas | Antennas Duck,EXR,902-928MHz |
товар відсутній |
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FQD2N90TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: SMD Case: DPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
товар відсутній |
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FQD2N90TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: SMD Case: DPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω кількість в упаковці: 1 шт |
товар відсутній |
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FQP2N90 | ON Semiconductor |
Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) TO-220 Tube |
товар відсутній |
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FQP2N90 | onsemi |
Description: MOSFET N-CH 900V 2.2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
товар відсутній |
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| FQU2N90TU-AM002 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
товар відсутній |
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| FQU2N90TU-AM002 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω кількість в упаковці: 1 шт |
товар відсутній |
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FQU2N90TU-AM002 | ON Semiconductor |
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Tube |
товар відсутній |
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FQU2N90TU-AM002 | onsemi |
Description: MOSFET N-CH 900V 1.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
товар відсутній |
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| FQU2N90TU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
товар відсутній |
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| FQU2N90TU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω кількість в упаковці: 1 шт |
товар відсутній |
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FQU2N90TU-WS | onsemi |
Description: MOSFET N-CH 900V 1.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
товар відсутній |
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FQU2N90TU-WS | ON Semiconductor |
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Tube |
товар відсутній |
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IXFB52N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 308nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: PLUS264™ Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 52A On-state resistance: 0.16Ω |
товар відсутній |
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IXFB52N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 308nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: PLUS264™ Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 52A On-state resistance: 0.16Ω кількість в упаковці: 1 шт |
товар відсутній |
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IXFB52N90P | Littelfuse |
Trans MOSFET N-CH 900V 52A 3-Pin(3+Tab) PLUS 264 |
товар відсутній |
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IXFB52N90P | IXYS |
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds |
товар відсутній |
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IXFH12N90 | IXYS |
MOSFET 900V 12A |
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IXFH12N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3 Type of transistor: N-MOSFET Power dissipation: 380W Polarisation: unipolar Kind of package: tube Gate charge: 56nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Mounting: THT Case: TO247-3 Drain-source voltage: 900V Drain current: 12A On-state resistance: 1Ω |
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IXFH12N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3 Type of transistor: N-MOSFET Power dissipation: 380W Polarisation: unipolar Kind of package: tube Gate charge: 56nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Mounting: THT Case: TO247-3 Drain-source voltage: 900V Drain current: 12A On-state resistance: 1Ω кількість в упаковці: 1 шт |
товар відсутній |
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IXFH12N90P | Littelfuse |
Trans MOSFET N-CH 900V 12A 3-Pin(3+Tab) TO-247AD |
товар відсутній |
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IXFK32N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264 Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Gate charge: 215nC Kind of channel: enhanced Mounting: THT Case: TO264 Drain-source voltage: 900V Drain current: 32A On-state resistance: 0.3Ω |
товар відсутній |
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IXFK32N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264 Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Gate charge: 215nC Kind of channel: enhanced Mounting: THT Case: TO264 Drain-source voltage: 900V Drain current: 32A On-state resistance: 0.3Ω кількість в упаковці: 1 шт |
товар відсутній |
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IXFK32N90P | IXYS |
MOSFET Polar HiPerFETs MOSFET w/Fast Diode |
товар відсутній |
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IXFN52N90P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A Power dissipation: 890W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 308nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 104A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 43A On-state resistance: 0.16Ω |
товар відсутній |
| S29GL032N90TFI04 |
Виробник: SPANSION
TSOP 10+PBF
TSOP 10+PBF
на замовлення 2880 шт:
термін постачання 14-28 дні (днів)| AL02BT2N902 |
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Виробник: Viking
Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 2.9nH; 460mA; 350mΩ; Q: 16; ±0,1nH
Operating current: 0.46A
Tolerance: ±0,1nH
Inductance: 2.9nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resonant frequency: 6GHz
Case - mm: 1005
Case - inch: 0402
Mounting: SMD
Resistance: 0.35Ω
Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 2.9nH; 460mA; 350mΩ; Q: 16; ±0,1nH
Operating current: 0.46A
Tolerance: ±0,1nH
Inductance: 2.9nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resonant frequency: 6GHz
Case - mm: 1005
Case - inch: 0402
Mounting: SMD
Resistance: 0.35Ω
товар відсутній
| AL02BT2N902 |
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Виробник: Viking
Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 2.9nH; 460mA; 350mΩ; Q: 16; ±0,1nH
Operating current: 0.46A
Tolerance: ±0,1nH
Inductance: 2.9nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resonant frequency: 6GHz
Case - mm: 1005
Case - inch: 0402
Mounting: SMD
Resistance: 0.35Ω
кількість в упаковці: 1000 шт
Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 2.9nH; 460mA; 350mΩ; Q: 16; ±0,1nH
Operating current: 0.46A
Tolerance: ±0,1nH
Inductance: 2.9nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resonant frequency: 6GHz
Case - mm: 1005
Case - inch: 0402
Mounting: SMD
Resistance: 0.35Ω
кількість в упаковці: 1000 шт
товар відсутній
| EXR2N902RTN |
Виробник: TE Connectivity / Laird External Antennas
Antennas Duck,EXR,902-928MHz
Antennas Duck,EXR,902-928MHz
товар відсутній
| FQD2N90TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
товар відсутній
| FQD2N90TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
кількість в упаковці: 1 шт
товар відсутній
| FQP2N90 |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| FQP2N90 |
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Виробник: onsemi
Description: MOSFET N-CH 900V 2.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 900V 2.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
товар відсутній
| FQU2N90TU-AM002 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
товар відсутній
| FQU2N90TU-AM002 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
кількість в упаковці: 1 шт
товар відсутній
| FQU2N90TU-AM002 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Tube
товар відсутній
| FQU2N90TU-AM002 |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 1.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 900V 1.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
товар відсутній
| FQU2N90TU-WS |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
товар відсутній
| FQU2N90TU-WS |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
кількість в упаковці: 1 шт
товар відсутній
| FQU2N90TU-WS |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 1.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 900V 1.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
товар відсутній
| FQU2N90TU-WS |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Tube
товар відсутній
| IXFB52N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
товар відсутній
| IXFB52N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
кількість в упаковці: 1 шт
товар відсутній
| IXFH12N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Drain-source voltage: 900V
Drain current: 12A
On-state resistance: 1Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Drain-source voltage: 900V
Drain current: 12A
On-state resistance: 1Ω
товар відсутній
| IXFH12N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Drain-source voltage: 900V
Drain current: 12A
On-state resistance: 1Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Drain-source voltage: 900V
Drain current: 12A
On-state resistance: 1Ω
кількість в упаковці: 1 шт
товар відсутній
| IXFK32N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
товар відсутній
| IXFK32N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
кількість в упаковці: 1 шт
товар відсутній
| IXFN52N90P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
товар відсутній